GB02SHT03-46 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 78.36 EUR |
| 10+ | 69.82 EUR |
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Technische Details GB02SHT03-46 GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 300V 4A TO46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 76pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-46, Operating Temperature - Junction: -55°C ~ 225°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 300 V.
Weitere Produktangebote GB02SHT03-46
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GB02SHT03-46 | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Diode |
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