GB01SLT12-214 Navitas Semiconductor, Inc.
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SIL CARBIDE 1.2KV 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 61pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
| Anzahl | Preis |
|---|---|
| 3000+ | 2.32 EUR |
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Technische Details GB01SLT12-214 Navitas Semiconductor, Inc.
Description: DIODE SIL CARBIDE 1.2KV 1A SMB, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 61pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V.
Weitere Produktangebote GB01SLT12-214 nach Preis ab 2.84 EUR bis 7.15 EUR
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GB01SLT12-214 | Hersteller : GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 2.5A Standard |
auf Bestellung 28715 Stücke: Lieferzeit 142-146 Tag (e) |
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GB01SLT12-214 | Hersteller : Navitas Semiconductor, Inc. |
Description: DIODE SIL CARBIDE 1.2KV 1A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 61pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
auf Bestellung 14247 Stücke: Lieferzeit 10-14 Tag (e) |
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GB01SLT12-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214; SiC; SMD; 1.2kV; 1A; reel,tape Max. off-state voltage: 1.2kV Case: DO214 Mounting: SMD Max. forward impulse current: 8A Kind of package: reel; tape Type of diode: Schottky rectifying Load current: 1A Technology: SiC Max. forward voltage: 1.5V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |