GB01SLT12-214 Navitas Semiconductor, Inc.
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SIL CARBIDE 1.2KV 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 61pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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Technische Details GB01SLT12-214 Navitas Semiconductor, Inc.
Description: DIODE SIL CARBIDE 1.2KV 1A SMB, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 61pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V.
Weitere Produktangebote GB01SLT12-214 nach Preis ab 3.38 EUR bis 8.51 EUR
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GB01SLT12-214 | GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 2.5A Standard |
auf Bestellung 28715 Stücke: Lieferzeit 142-146 Tag (e) |
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GB01SLT12-214 | Navitas Semiconductor, Inc. |
Description: DIODE SIL CARBIDE 1.2KV 1A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 61pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
auf Bestellung 14247 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GB01SLT12-214 |
|
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 2.5A Standard
SiC Schottky Diodes 1200V 2.5A Standard
auf Bestellung 28715 Stücke:
Lieferzeit 142-146 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.01 EUR |
| 10+ | 4.41 EUR |
| 25+ | 4.21 EUR |
| 100+ | 3.89 EUR |
| 250+ | 3.71 EUR |
| 500+ | 3.56 EUR |
| 1000+ | 3.44 EUR |
| GB01SLT12-214 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SIL CARBIDE 1.2KV 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 61pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 61pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 14247 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.51 EUR |
| 10+ | 5.62 EUR |
| 100+ | 3.97 EUR |
| 500+ | 3.38 EUR |