GB10SLT12-252 GeneSiC Semiconductor

Description: DIODE SIL CARB 1.2KV 10A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 520pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 1200 V.