GBJ10D DC COMPONENTS
Hersteller: DC COMPONENTSCategory: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 210A
Max. off-state voltage: 200V
Max. forward impulse current: 210A
Case: GBJ4-10
Kind of package: tube
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Load current: 10A
Leads: flat pin
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 288+ | 0.25 EUR |
| 295+ | 0.24 EUR |
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Technische Details GBJ10D DC COMPONENTS
Category: Flat single phase diode bridge rectif., Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 210A, Max. off-state voltage: 200V, Max. forward impulse current: 210A, Case: GBJ4-10, Kind of package: tube, Features of semiconductor devices: glass passivated, Type of bridge rectifier: single-phase, Electrical mounting: THT, Version: flat, Max. forward voltage: 1.1V, Load current: 10A, Leads: flat pin.
Weitere Produktangebote GBJ10D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| GBJ10D | Hersteller : GeneSiC Semiconductor |
Description: 200V 10A GBJ SINGLE PHASE BRIDGEPackaging: Bulk Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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GBJ10D | Hersteller : GeneSiC Semiconductor |
Bridge Rectifiers 200V 10A GBJ Single Phase Bridge Rectifier |
Produkt ist nicht verfügbar |