Technische Details MSRT200120(A)D GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MSRT200120(A)D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MSRT200120AD | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1.2KV 3TOWER Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
d_SPL.jpg "MSRT200120(A)D") |
MSRT200120(A)D | GeneSiC Semiconductor |
 Discrete Semiconductor Modules 1200V 200A Forward |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MSRT200120AD |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Description: DIODE MODULE GP 1.2KV 3TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSRT200120(A)D |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 200A Forward
Discrete Semiconductor Modules 1200V 200A Forward
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH