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MUR2X120A06 MUR2X120A06 GeneSiC Semiconductor mur2x120a06.pdf Description: DIODE GEN PURP 600V 120A SOT227
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR2X120A06 MUR2X120A06 GeneSiC Semiconductor mur2x120a06-2451820.pdf Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery
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MUR2X120A10 MUR2X120A10 GeneSiC Semiconductor mur2x120a10-2452602.pdf Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery
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MUR2X120A10 MUR2X120A10 GeneSiC Semiconductor mur2x120a10.pdf Description: DIODE MOD GP 1000V 120A SOT-227
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR2X120A12 MUR2X120A12 GeneSiC Semiconductor mur2x120a12.pdf Description: DIODE GEN PURP 1.2KV 120A SOT227
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MUR2X120A12 MUR2X120A12 GeneSiC Semiconductor mur2x120a12-2452296.pdf Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery
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MUR30005CT GeneSiC Semiconductor mur30005ct.pdf Description: DIODE MODULE GP 50V 150A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MUR30005CT MUR30005CT GeneSiC Semiconductor mur30005ct_thru_mur30020ctr-475474.pdf Rectifiers 50V 300A Super Fast Recovery
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MUR30005CTR MUR30005CTR GeneSiC Semiconductor mur30005ct_thru_mur30020ctr-475474.pdf Rectifiers 50V 300A Super Fast Recovery
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MUR30005CTR GeneSiC Semiconductor mur30005ct.pdf Description: DIODE MODULE GP 50V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR30010CT MUR30010CT GeneSiC Semiconductor mur30010ct-3481382.pdf Diode Modules 100V 300A Super Fast Recovery
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MUR30010CT GeneSiC Semiconductor mur30005ct.pdf Description: DIODE MODULE GP 100V 150A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
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MUR30010CTR GeneSiC Semiconductor mur30005ct.pdf Description: DIODE MODULE GP 100V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR30010CTR MUR30010CTR GeneSiC Semiconductor mur30010ctr-3482448.pdf Diode Modules 100V 300A Super Fast Recovery
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MUR30020CT GeneSiC Semiconductor mur30005ct.pdf Description: DIODE MODULE GP 200V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR30020CT MUR30020CT GeneSiC Semiconductor mur30020ct-3480884.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
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MUR30020CTR GeneSiC Semiconductor mur30005ct.pdf Description: DIODE MODULE GP 200V 150A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar
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MUR30020CTR MUR30020CTR GeneSiC Semiconductor mur30020ctr-3482523.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
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MUR30040CT MUR30040CT GeneSiC Semiconductor mur30040ct-3482646.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
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MUR30040CT GeneSiC Semiconductor mur30040ct.pdf Description: DIODE MODULE GP 400V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR30040CTR GeneSiC Semiconductor mur30040ct.pdf Description: DIODE MODULE GP 400V 150A 2TOWER
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Produkt ist nicht verfügbar
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MUR30040CTR MUR30040CTR GeneSiC Semiconductor mur30040ctr-3481525.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
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MUR30060CT GeneSiC Semiconductor mur30040ct.pdf Description: DIODE MODULE GP 600V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR30060CT MUR30060CT GeneSiC Semiconductor mur30060ct-3482195.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
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MUR30060CTR GeneSiC Semiconductor mur30040ct.pdf Description: DIODE MODULE GP 600V 150A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
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MUR30060CTR MUR30060CTR GeneSiC Semiconductor mur30060ctr-3481623.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
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MUR40005CT MUR40005CT GeneSiC Semiconductor mur40005ct-3480302.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
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MUR40005CT GeneSiC Semiconductor mur40005ct.pdf Description: DIODE MODULE GP 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40005CTR GeneSiC Semiconductor mur40005ct.pdf Description: DIODE MODULE GP 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40005CTR MUR40005CTR GeneSiC Semiconductor mur40005ctr-3480344.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
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MUR40010CT GeneSiC Semiconductor mur40005ct.pdf Description: DIODE MODULE GP 100V 200A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
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MUR40010CT MUR40010CT GeneSiC Semiconductor mur40010ct-3482647.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V 400A100P/70R
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MUR40010CTR GeneSiC Semiconductor mur40005ct.pdf Description: DIODE MODULE GP 100V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40010CTR MUR40010CTR GeneSiC Semiconductor mur40010ctr-3482796.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V 400A100P/70R
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MUR40020CT GeneSiC Semiconductor mur40005ct.pdf Description: DIODE MODULE GP 200V 200A 2TOWER
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
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MUR40020CT MUR40020CT GeneSiC Semiconductor mur40020ct-3482571.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V400A200P/140R
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MUR40020CTR MUR40020CTR GeneSiC Semiconductor mur40020ctr-3481864.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V400A200P/140R
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MUR40020CTR GeneSiC Semiconductor mur40005ct.pdf Description: DIODE MODULE GP 200V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40040CT GeneSiC Semiconductor mur40040ct.pdf Description: DIODE MODULE GP 400V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40040CT MUR40040CT GeneSiC Semiconductor mur40040ct-3481530.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V400A400P/280R
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MUR40040CTR GeneSiC Semiconductor mur40040ct.pdf Description: DIODE MODULE GP 400V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40040CTR MUR40040CTR GeneSiC Semiconductor mur40040ctr-3481865.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V400A400P/280R
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MUR40060CT MUR40060CT GeneSiC Semiconductor mur40060ct-3482602.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V400A600P/420R
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MUR40060CT GeneSiC Semiconductor mur40040ct.pdf Description: DIODE MODULE GP 600V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40060CTR MUR40060CTR GeneSiC Semiconductor mur40060ctr-3482603.pdf Diode Modules SI S-FST RECOV 2TWR 50-600V400A600P/420R
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MUR40060CTR GeneSiC Semiconductor mur40040ct.pdf Description: DIODE MODULE GP 600V 200A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Produkt ist nicht verfügbar
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MUR5005 MUR5005 GeneSiC Semiconductor mur5005-3483022.pdf Rectifiers 50V 50A Super Fast Recovery
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.39 EUR
10+28.65 EUR
25+26.77 EUR
100+24.8 EUR
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MUR5005 GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP 50V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR5005R MUR5005R GeneSiC Semiconductor mur5005r-3483035.pdf Rectifiers 50V 50A REV Leads Super Fast Recovery
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MUR5005R GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP REV 50V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR5010 MUR5010 GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP 100V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR5010 MUR5010 GeneSiC Semiconductor mur5005.pdf Rectifier Diode Switching 100V 50A 75ns 2-Pin DO-5
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MUR5010 MUR5010 GeneSiC Semiconductor mur5010-3483012.pdf Rectifiers 100V 50A Super Fast Recovery
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MUR5010R MUR5010R GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP REV 100V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.99 EUR
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MUR5010R MUR5010R GeneSiC Semiconductor mur5010r-3483046.pdf Rectifiers 100V 50A REV Leads Super Fast Recovery
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.99 EUR
10+29.18 EUR
25+27.16 EUR
100+25.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020 MUR5020 GeneSiC Semiconductor mur5005.pdf Rectifier Diode Switching 200V 50A 75ns 2-Pin DO-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020 GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP 200V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020 MUR5020 GeneSiC Semiconductor mur5020.pdf Rectifiers 200V 50A Super Fast Recovery
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.8 EUR
10+26.49 EUR
25+24.62 EUR
100+22.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020R GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP REV 200V 50A DO5
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020R MUR5020R GeneSiC Semiconductor mur5020r-3483052.pdf Rectifiers 200V 50A REV Leads Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X120A06 mur2x120a06.pdf
MUR2X120A06
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 120A SOT227
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR2X120A06 mur2x120a06-2451820.pdf
MUR2X120A06
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery
Produkt ist nicht verfügbar
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MUR2X120A10 mur2x120a10-2452602.pdf
MUR2X120A10
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X120A10 mur2x120a10.pdf
MUR2X120A10
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 120A SOT-227
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X120A12 mur2x120a12.pdf
MUR2X120A12
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 120A SOT227
Produkt ist nicht verfügbar
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MUR2X120A12 mur2x120a12-2452296.pdf
MUR2X120A12
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery
Produkt ist nicht verfügbar
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MUR30005CT mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 150A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
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MUR30005CT mur30005ct_thru_mur30020ctr-475474.pdf
MUR30005CT
Hersteller: GeneSiC Semiconductor
Rectifiers 50V 300A Super Fast Recovery
Produkt ist nicht verfügbar
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MUR30005CTR mur30005ct_thru_mur30020ctr-475474.pdf
MUR30005CTR
Hersteller: GeneSiC Semiconductor
Rectifiers 50V 300A Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30005CTR mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR30010CT mur30010ct-3481382.pdf
MUR30010CT
Hersteller: GeneSiC Semiconductor
Diode Modules 100V 300A Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30010CT mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 150A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30010CTR mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30010CTR mur30010ctr-3482448.pdf
MUR30010CTR
Hersteller: GeneSiC Semiconductor
Diode Modules 100V 300A Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30020CT mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30020CT mur30020ct-3480884.pdf
MUR30020CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30020CTR mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30020CTR mur30020ctr-3482523.pdf
MUR30020CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30040CT mur30040ct-3482646.pdf
MUR30040CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30040CT mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30040CTR mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 2TOWER
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30040CTR mur30040ctr-3481525.pdf
MUR30040CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30060CT mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30060CT mur30060ct-3482195.pdf
MUR30060CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30060CTR mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR30060CTR mur30060ctr-3481623.pdf
MUR30060CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40005CT mur40005ct-3480302.pdf
MUR40005CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40005CT mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40005CTR mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40005CTR mur40005ctr-3480344.pdf
MUR40005CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40010CT mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40010CT mur40010ct-3482647.pdf
MUR40010CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A100P/70R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40010CTR mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40010CTR mur40010ctr-3482796.pdf
MUR40010CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A100P/70R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40020CT mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 2TOWER
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40020CT mur40020ct-3482571.pdf
MUR40020CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V400A200P/140R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40020CTR mur40020ctr-3481864.pdf
MUR40020CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V400A200P/140R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40020CTR mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40040CT mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40040CT mur40040ct-3481530.pdf
MUR40040CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V400A400P/280R
Produkt ist nicht verfügbar
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MUR40040CTR mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40040CTR mur40040ctr-3481865.pdf
MUR40040CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V400A400P/280R
Produkt ist nicht verfügbar
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MUR40060CT mur40060ct-3482602.pdf
MUR40060CT
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V400A600P/420R
Produkt ist nicht verfügbar
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MUR40060CT mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR40060CTR mur40060ctr-3482603.pdf
MUR40060CTR
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V400A600P/420R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR40060CTR mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Produkt ist nicht verfügbar
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MUR5005 mur5005-3483022.pdf
MUR5005
Hersteller: GeneSiC Semiconductor
Rectifiers 50V 50A Super Fast Recovery
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.39 EUR
10+28.65 EUR
25+26.77 EUR
100+24.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR5005 mur5005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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MUR5005R mur5005r-3483035.pdf
MUR5005R
Hersteller: GeneSiC Semiconductor
Rectifiers 50V 50A REV Leads Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5005R mur5005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5010 mur5005.pdf
MUR5010
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5010 mur5005.pdf
MUR5010
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 50A 75ns 2-Pin DO-5
Produkt ist nicht verfügbar
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MUR5010 mur5010-3483012.pdf
MUR5010
Hersteller: GeneSiC Semiconductor
Rectifiers 100V 50A Super Fast Recovery
Produkt ist nicht verfügbar
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MUR5010R mur5005.pdf
MUR5010R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR5010R mur5010r-3483046.pdf
MUR5010R
Hersteller: GeneSiC Semiconductor
Rectifiers 100V 50A REV Leads Super Fast Recovery
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.99 EUR
10+29.18 EUR
25+27.16 EUR
100+25.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020 mur5005.pdf
MUR5020
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 200V 50A 75ns 2-Pin DO-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020 mur5005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 50A DO5
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020 mur5020.pdf
MUR5020
Hersteller: GeneSiC Semiconductor
Rectifiers 200V 50A Super Fast Recovery
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.8 EUR
10+26.49 EUR
25+24.62 EUR
100+22.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020R mur5005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 50A DO5
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR5020R mur5020r-3483052.pdf
MUR5020R
Hersteller: GeneSiC Semiconductor
Rectifiers 200V 50A REV Leads Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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