MUR5060 GeneSiC Semiconductor

Description: DIODE GEN PURP 600V 50A DO5, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-5, Current - Average Rectified (Io): 50A, Technology: Standard, Reverse Recovery Time (trr): 90 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AB, DO-5, Stud, Packaging: Bulk.