Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (4214) > Seite 58 nach 71
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MSRTA60060(A) | GeneSiC Semiconductor |
 Description: DIODE MODULE 600V 600A 3TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MSRTA60080(A) | GeneSiC Semiconductor |
Description: DIODE MODULE 800V 600A 3TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10005CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR10005CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A 50P/35R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR10005CTR | GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV 2TWR 50-600V 100A 50P/35R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10005CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR10010CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10010CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MUR10010CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 50A 2TOWER Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR10010CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10020CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR10020CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
MUR10020CT | GeneSiC Semiconductor |
Diode Switching 200V 100A 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR10020CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR10040CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10040CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR10040CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 50A 2TOWER Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|
|
MUR10060CT | GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR10060CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 110 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MUR10060CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 50A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 50A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 110 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|
|
MUR10060CTR | GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR20005CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR20005CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR20005CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR20005CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR20010CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR20010CT | GeneSiC Semiconductor |
Diode Modules 100V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR20010CTR | GeneSiC Semiconductor |
Diode Modules 100V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR20010CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR20020CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
 |
MUR20020CT | GeneSiC Semiconductor |
Diode Modules 200V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MUR20020CT | GeneSiC Semiconductor |
Diode Switching 200V 200A 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR20020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR20020CTR | GeneSiC Semiconductor |
Diode Modules 200V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR20040CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR20040CT | GeneSiC Semiconductor |
Diode Modules 400V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MUR20040CT | GeneSiC Semiconductor |
Diode Switching 400V 200A 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR20040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR20040CTR | GeneSiC Semiconductor |
Diode Modules 400V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR20060CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 110 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR20060CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| MUR20060CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 100A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 110 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR20060CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR2505 | GeneSiC Semiconductor |
Rectifiers 50V 25A Super Fast Recovery |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
MUR2505R | GeneSiC Semiconductor |
Rectifiers 50V 25A REV Leads Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR2510 | GeneSiC Semiconductor |
Rectifiers 100V 25A Super Fast Recovery |
auf Bestellung 633 Stücke: Lieferzeit 101-105 Tag (e) |
|
||||||||||
 |
MUR2510 | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4 |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
MUR2510 | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR2510R | GeneSiC Semiconductor |
Rectifiers 100V 25A REV Leads Super Fast Recovery |
auf Bestellung 373 Stücke: Lieferzeit 101-105 Tag (e) |
|
||||||||||
 |
MUR2510R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR2520 | GeneSiC Semiconductor |
Rectifiers 200V 25A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR2520R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 25A DO4 Current - Average Rectified (Io): 25A Technology: Standard, Reverse Polarity Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR2520R | GeneSiC Semiconductor |
Rectifiers 200V 25A REV Leads Super Fast Recovery |
auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| MUR2540 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 25A DO4 Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 25A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR2540 | GeneSiC Semiconductor |
Rectifiers 400V 25A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
MUR2540R | GeneSiC Semiconductor |
Rectifiers 400V 25A REV Leads Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MUR2540R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 25A DO4 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 25A Technology: Standard, Reverse Polarity Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
MUR2560 | GeneSiC Semiconductor |
Rectifiers 600V 25A Super Fast Recovery |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MSRTA60060(A) |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 600A 3TOWER
Description: DIODE MODULE 600V 600A 3TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSRTA60080(A) |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 800V 600A 3TOWER
Description: DIODE MODULE 800V 600A 3TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10005CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 50V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10005CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A 50P/35R
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A 50P/35R
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10005CTR |
|
Hersteller: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 2TWR 50-600V 100A 50P/35R
Rectifiers SI S-FST RECOV 2TWR 50-600V 100A 50P/35R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR10005CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 50V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10010CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10010CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 100V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10010CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 50A 2TOWER
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Description: DIODE MODULE GP 100V 50A 2TOWER
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10010CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10020CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 200V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10020CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 144.16 EUR |
| 10+ | 124.78 EUR |
| 25+ | 117.24 EUR |
| MUR10020CT |
|
Hersteller: GeneSiC Semiconductor
Diode Switching 200V 100A 3-Pin Twin Tower
Diode Switching 200V 100A 3-Pin Twin Tower
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10020CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 200V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10020CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10040CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10040CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 400V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10040CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10040CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 50A 2TOWER
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Description: DIODE MODULE GP 400V 50A 2TOWER
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR10060CT |
|
Hersteller: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR10060CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 600V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR10060CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 600V 50A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR10060CTR |
|
Hersteller: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| MUR20005CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 50V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20005CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20005CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20005CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 50V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20010CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 100V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20010CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 100V 200A Super Fast Recovery
Diode Modules 100V 200A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20010CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 100V 200A Super Fast Recovery
Diode Modules 100V 200A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20010CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 100V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20020CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 200V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 211.89 EUR |
| MUR20020CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 200V 200A Super Fast Recovery
Diode Modules 200V 200A Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR20020CT |
|
Hersteller: GeneSiC Semiconductor
Diode Switching 200V 200A 3-Pin Twin Tower
Diode Switching 200V 200A 3-Pin Twin Tower
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20020CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 200V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20020CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 200V 200A Super Fast Recovery
Diode Modules 200V 200A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20040CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 400V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20040CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 400V 200A Super Fast Recovery
Diode Modules 400V 200A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20040CT |
|
Hersteller: GeneSiC Semiconductor
Diode Switching 400V 200A 3-Pin Twin Tower
Diode Switching 400V 200A 3-Pin Twin Tower
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20040CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 400V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20040CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 400V 200A Super Fast Recovery
Diode Modules 400V 200A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20060CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 600V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20060CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 252.63 EUR |
| 25+ | 206.3 EUR |
| MUR20060CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Description: DIODE MODULE GP 600V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR20060CTR |
|
Hersteller: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2505 |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 50V 25A Super Fast Recovery
Rectifiers 50V 25A Super Fast Recovery
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.7 EUR |
| 10+ | 20.69 EUR |
| MUR2505R |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 50V 25A REV Leads Super Fast Recovery
Rectifiers 50V 25A REV Leads Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2510 |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 100V 25A Super Fast Recovery
Rectifiers 100V 25A Super Fast Recovery
auf Bestellung 633 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.21 EUR |
| 10+ | 23.51 EUR |
| 25+ | 21.85 EUR |
| 100+ | 19.87 EUR |
| 250+ | 19.85 EUR |
| MUR2510 |
|
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 27.12 EUR |
| 25+ | 23.53 EUR |
| 50+ | 21.56 EUR |
| 100+ | 20.11 EUR |
| 250+ | 18.64 EUR |
| MUR2510 |
|
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2510R |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 100V 25A REV Leads Super Fast Recovery
Rectifiers 100V 25A REV Leads Super Fast Recovery
auf Bestellung 373 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.21 EUR |
| 10+ | 23.51 EUR |
| 25+ | 21.85 EUR |
| 100+ | 19.87 EUR |
| 250+ | 19.85 EUR |
| MUR2510R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2520 |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 200V 25A Super Fast Recovery
Rectifiers 200V 25A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2520R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 25A DO4
Current - Average Rectified (Io): 25A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Description: DIODE GEN PURP REV 200V 25A DO4
Current - Average Rectified (Io): 25A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2520R |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 200V 25A REV Leads Super Fast Recovery
Rectifiers 200V 25A REV Leads Super Fast Recovery
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.7 EUR |
| 10+ | 19.75 EUR |
| 25+ | 18.37 EUR |
| 100+ | 16.45 EUR |
| 250+ | 15.9 EUR |
| MUR2540 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 25A DO4
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 25A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Description: DIODE GEN PURP 400V 25A DO4
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 25A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2540 |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 400V 25A Super Fast Recovery
Rectifiers 400V 25A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2540R |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 400V 25A REV Leads Super Fast Recovery
Rectifiers 400V 25A REV Leads Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2540R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 25A DO4
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 25A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Description: DIODE GEN PURP REV 400V 25A DO4
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 25A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR2560 |
|
Hersteller: GeneSiC Semiconductor
Rectifiers 600V 25A Super Fast Recovery
Rectifiers 600V 25A Super Fast Recovery
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH