Technische Details MUR20040CT IXYS
Description: DIODE MODULE GP 400V 100A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 90 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Weitere Produktangebote MUR20040CT
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MUR20040CT | Hersteller : MOT | F4-7 |
auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
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MUR20040CT Produktcode: 106261 |
Hersteller : MOTOROLA |
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle |
Produkt ist nicht verfügbar
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MUR20040CT | Hersteller : GeneSiC Semiconductor | Rectifier Diode Switching 400V 200A 90ns 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
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MUR20040CT | Hersteller : GeneSiC Semiconductor | Rectifier Diode Switching 400V 200A 90ns 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
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MUR20040CT | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MUR20040CT | Hersteller : GeneSiC Semiconductor | Discrete Semiconductor Modules 400V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |