MUR20020CT GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 176.69 EUR |
| 10+ | 164.4 EUR |
| 25+ | 160.16 EUR |
| 40+ | 160.14 EUR |
| 120+ | 160.07 EUR |
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Technische Details MUR20020CT GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 2TOWER, Current - Reverse Leakage @ Vr: 25 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk.
Weitere Produktangebote MUR20020CT nach Preis ab 178.06 EUR bis 178.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MUR20020CT | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 200V 100A 2TOWERCurrent - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUR20020CT | Hersteller : MOTOROLA |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |