Technische Details MUR20010CT MOTOROLA
Description: DIODE MODULE GP 100V 100A 2TOWER, Current - Reverse Leakage @ Vr: 25 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk.
Weitere Produktangebote MUR20010CT
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MUR20010CT | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 100V 100A 2TOWERCurrent - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
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MUR20010CT | Hersteller : GeneSiC Semiconductor |
Diode Modules 100V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |