MSRT150160D GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 1600V 150A THREE TOWER SILICON R
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
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Technische Details MSRT150160D GeneSiC Semiconductor
Description: 1600V 150A THREE TOWER SILICON R, Current - Reverse Leakage @ Vr: 10 µA @ 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A, Voltage - DC Reverse (Vr) (Max): 1600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 150A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MSRT150160D
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSRT150160D | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 1600V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration) |
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