Technische Details MSRT200120(A) GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MSRT200120(A)
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MSRT200120A | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE GP 1.2KV 3TOWER Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
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