GA06JT12-247 GeneSiC Semiconductor

Description: TRANS SJT 1200V 6A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 500V, Current Drain (Id) - Max: 6 A, Supplier Device Package: TO-247-3, Drain to Source Voltage (Vdss): 1.2 kV, Power - Max: 24 W, Resistance - RDS(On): 200 mOhms.