Technische Details GA06JT12-247 GeneSiC Semiconductor
Description: TRANS SJT 1200V 6A TO247AB, Packaging: Tube, Resistance - RDS(On): 200 mOhms, Power - Max: 24 W, Drain to Source Voltage (Vdss): 1.2 kV, Supplier Device Package: TO-247-3, Current Drain (Id) - Max: 6 A, Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 500V, FET Type: N-Channel, Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3.
Weitere Produktangebote GA06JT12-247
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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GA06JT12-247 | GeneSiC Semiconductor |
 Description: TRANS SJT 1200V 6A TO247ABPackaging: Tube Resistance - RDS(On): 200 mOhms Power - Max: 24 W Drain to Source Voltage (Vdss): 1.2 kV Supplier Device Package: TO-247-3 Current Drain (Id) - Max: 6 A Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 500V FET Type: N-Channel Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-247-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1260 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GA06JT12-247 |
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Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 6A TO247AB
Packaging: Tube
Resistance - RDS(On): 200 mOhms
Power - Max: 24 W
Drain to Source Voltage (Vdss): 1.2 kV
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 6 A
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 500V
FET Type: N-Channel
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Description: TRANS SJT 1200V 6A TO247AB
Packaging: Tube
Resistance - RDS(On): 200 mOhms
Power - Max: 24 W
Drain to Source Voltage (Vdss): 1.2 kV
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 6 A
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 500V
FET Type: N-Channel
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 1260 Stücke
Im Einkaufswagen
Stück im Wert von UAH