GA50JT12-247 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: TRANS SJT 1200V 100A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 800V
Current Drain (Id) - Max: 100 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 583 W
Resistance - RDS(On): 20 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 10 µA @ 1.2 kV
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Technische Details GA50JT12-247 GeneSiC Semiconductor
Description: TRANS SJT 1200V 100A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 800V, Current Drain (Id) - Max: 100 A, Supplier Device Package: TO-247-3, Drain to Source Voltage (Vdss): 1.2 kV, Power - Max: 583 W, Resistance - RDS(On): 20 mOhms, Current - Drain (Idss) @ Vds (Vgs=0): 10 µA @ 1.2 kV.
Weitere Produktangebote GA50JT12-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GA50JT12-247 | Hersteller : GeneSiC Semiconductor |
JFET 1200V 100A Standard |
Produkt ist nicht verfügbar |