GAP3SLT33-214 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 12.73 EUR |
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Technische Details GAP3SLT33-214 GeneSiC Semiconductor
Description: DIODE SIC 3.3KV 300MA DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 42pF @ 1V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: DO-214AA, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA, Current - Reverse Leakage @ Vr: 10 µA @ 3300 V.
Weitere Produktangebote GAP3SLT33-214 nach Preis ab 16.52 EUR bis 26 EUR
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GAP3SLT33-214 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIC 3.3KV 300MA DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 42pF @ 1V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA Current - Reverse Leakage @ Vr: 10 µA @ 3300 V |
auf Bestellung 7768 Stücke: Lieferzeit 10-14 Tag (e) |
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GAP3SLT33-214 | Hersteller : GeneSiC Semiconductor | Schottky Diodes & Rectifiers 3300V - 0.3 A SiC Schottky Rectifier |
auf Bestellung 5582 Stücke: Lieferzeit 205-219 Tag (e) |
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GAP3SLT33-214 Produktcode: 111733 |
Verschiedene Bauteile > Other components 3 |
Produkt ist nicht verfügbar
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GAP3SLT33-214 | Hersteller : GeneSiC Semiconductor | Rectifier Diode Schottky SiC 3.3KV 0.3A 2-Pin SMB |
Produkt ist nicht verfügbar |
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GAP3SLT33-214 | Hersteller : GeneSiC Semiconductor | Rectifier Diode Schottky SiC 3.3KV 0.3A 2-Pin SMB |
Produkt ist nicht verfügbar |
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GAP3SLT33-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214 Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 3.3kV Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 1.15V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GAP3SLT33-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214 Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 3.3kV Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 1.15V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |