GAP3SLT33-214 GeneSiC Semiconductor
auf Bestellung 5582 Stücke:
Lieferzeit 201-205 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.6 EUR |
| 10+ | 16.02 EUR |
| 25+ | 15.45 EUR |
| 100+ | 14.61 EUR |
| 250+ | 14.06 EUR |
| 500+ | 13.68 EUR |
| 1000+ | 13.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GAP3SLT33-214 GeneSiC Semiconductor
Description: DIODE SIC 3.3KV 300MA DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 42pF @ 1V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: DO-214AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA, Current - Reverse Leakage @ Vr: 10 µA @ 3300 V.
Weitere Produktangebote GAP3SLT33-214 nach Preis ab 17.12 EUR bis 19.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GAP3SLT33-214 | Hersteller : Navitas Semiconductor, Inc. |
 Description: DIODE SIC 3.3KV 300MA DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 42pF @ 1V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA Current - Reverse Leakage @ Vr: 10 µA @ 3300 V |
auf Bestellung 2134 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
GAP3SLT33-214 Produktcode: 111733
zu Favoriten hinzufügen
Lieblingsprodukt
|
Verschiedene Bauteile > Other components 3 |
Produkt ist nicht verfügbar
|
||||||||||
|
|
GAP3SLT33-214 | Hersteller : Navitas Semiconductor, Inc. |
Description: DIODE SIC 3.3KV 300MA DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 42pF @ 1V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA Current - Reverse Leakage @ Vr: 10 µA @ 3300 V |
Produkt ist nicht verfügbar |
|||||||||
 |
GAP3SLT33-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214; SiC; SMD; 3.3kV; 300mA Mounting: SMD Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Kind of package: reel; tape Load current: 0.3A Max. forward impulse current: 1A Max. forward voltage: 1.15V Max. off-state voltage: 3.3kV Case: DO214 |
Produkt ist nicht verfügbar |