GA20JT12-263 GeneSiC Semiconductor

Description: TRANS SJT 1200V 45A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V, Drain to Source Voltage (Vdss): 1200 V, Part Status: Active, Supplier Device Package: TO-263-7, Power Dissipation (Max): 282W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Packaging: Tube.