GA08JT17-247 GeneSiC Semiconductor


GA08JT17-247-218631.pdf Hersteller: GeneSiC Semiconductor
MOSFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A
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Technische Details GA08JT17-247 GeneSiC Semiconductor

Description: TRANS SJT 1700V 8A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, Power Dissipation (Max): 48W (Tc), Supplier Device Package: TO-247-3, Drain to Source Voltage (Vdss): 1.7 kV, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V, Current Drain (Id) - Max: 8 A, Power - Max: 48 W, Resistance - RDS(On): 230 mOhms.

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GA08JT17-247 GA08JT17-247 Hersteller : GeneSiC Semiconductor Description: TRANS SJT 1700V 8A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
Power Dissipation (Max): 48W (Tc)
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.7 kV
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V
Current Drain (Id) - Max: 8 A
Power - Max: 48 W
Resistance - RDS(On): 230 mOhms
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