GA08JT17-247 GeneSiC Semiconductor
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details GA08JT17-247 GeneSiC Semiconductor
Description: TRANS SJT 1700V 8A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, Power Dissipation (Max): 48W (Tc), Supplier Device Package: TO-247-3, Drain to Source Voltage (Vdss): 1.7 kV, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V, Current Drain (Id) - Max: 8 A, Power - Max: 48 W, Resistance - RDS(On): 230 mOhms.
Weitere Produktangebote GA08JT17-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
GA08JT17-247 | Hersteller : GeneSiC Semiconductor |
Description: TRANS SJT 1700V 8A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C) Rds On (Max) @ Id, Vgs: 250mOhm @ 8A Power Dissipation (Max): 48W (Tc) Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1.7 kV Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V Current Drain (Id) - Max: 8 A Power - Max: 48 W Resistance - RDS(On): 230 mOhms |
Produkt ist nicht verfügbar |