GA08JT17-247 GeneSiC Semiconductor
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Technische Details GA08JT17-247 GeneSiC Semiconductor
Description: TRANS SJT 1700V 8A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V, Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, Power Dissipation (Max): 48W (Tc), Current Drain (Id) - Max: 8 A, Supplier Device Package: TO-247-3, Drain to Source Voltage (Vdss): 1.7 kV, Power - Max: 48 W, Resistance - RDS(On): 230 mOhms.
Weitere Produktangebote GA08JT17-247
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GA08JT17-247 | Hersteller : GeneSiC Semiconductor |
Description: TRANS SJT 1700V 8A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V Rds On (Max) @ Id, Vgs: 250mOhm @ 8A Power Dissipation (Max): 48W (Tc) Current Drain (Id) - Max: 8 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1.7 kV Power - Max: 48 W Resistance - RDS(On): 230 mOhms |
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