Technische Details GA08JT17-247 GeneSiC Semiconductor
Description: TRANS SJT 1700V 8A TO247AB, Resistance - RDS(On): 230 mOhms, Power - Max: 48 W, Current Drain (Id) - Max: 8 A, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V, Drain to Source Voltage (Vdss): 1.7 kV, Supplier Device Package: TO-247-3, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote GA08JT17-247
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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GA08JT17-247 | GeneSiC Semiconductor |
Description: TRANS SJT 1700V 8A TO247AB Resistance - RDS(On): 230 mOhms Power - Max: 48 W Current Drain (Id) - Max: 8 A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V Drain to Source Voltage (Vdss): 1.7 kV Supplier Device Package: TO-247-3 Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8A Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GA08JT17-247 |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 8A TO247AB
Resistance - RDS(On): 230 mOhms
Power - Max: 48 W
Current Drain (Id) - Max: 8 A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V
Drain to Source Voltage (Vdss): 1.7 kV
Supplier Device Package: TO-247-3
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: TRANS SJT 1700V 8A TO247AB
Resistance - RDS(On): 230 mOhms
Power - Max: 48 W
Current Drain (Id) - Max: 8 A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V
Drain to Source Voltage (Vdss): 1.7 kV
Supplier Device Package: TO-247-3
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH