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G2R1000MT33J-TR

G2R1000MT33J-TR GeneSiC Semiconductor

G2R1000MT33J.pdf Hersteller: GeneSiC Semiconductor
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+22.02 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G2R1000MT33J-TR GeneSiC Semiconductor

Description: 3300V 1000M TO-263-7 G2R SIC MOS, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 2mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V.

Weitere Produktangebote G2R1000MT33J-TR nach Preis ab 25.62 EUR bis 28.92 EUR

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G2R1000MT33J-TR G2R1000MT33J-TR Hersteller : GeneSiC Semiconductor G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.92 EUR
10+26.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
G2R1000MT33J-TR Hersteller : GeneSiC Semiconductor g2r1000mt33j.pdf 3300 V 1000 M Sic MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+25.62 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
G2R1000MT33J-TR Hersteller : GeneSiC Semiconductor g2r1000mt33j.pdf 3300 V 1000 M Sic MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+26.44 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
G2R1000MT33J-TR Hersteller : GeneSiC Semiconductor G2R1000MT33J.pdf 3300V 1000m TO-263-7 G2R SiC MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH