Technische Details G2R1000MT33J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V.
Weitere Produktangebote G2R1000MT33J nach Preis ab 20.67 EUR bis 36.4 EUR
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G2R1000MT33J | GeneSiC Semiconductor |
 Trans MOSFET N-CH SiC 3.3KV 4A 8-Pin(7+Tab) TO-263 |
auf Bestellung 3103 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT33J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 4A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V |
auf Bestellung 2205 Stücke: Lieferzeit 10-14 Tag (e) |
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G2R1000MT33J | GeneSiC Semiconductor |
MOSFET 3300V 1000mohm TO-263-7 G2R SiC MOSFET |
auf Bestellung 2581 Stücke: Lieferzeit 10-14 Tag (e) |
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G2R1000MT33J | GENESIC |
Description: GENESIC - G2R1000MT33J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 4 A, 3.3 kV, 1 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 3.3kV rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 74W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: G2R productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (17-Dec-2015) |
auf Bestellung 436 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| G2R1000MT33J |
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Hersteller: GeneSiC Semiconductor
Trans MOSFET N-CH SiC 3.3KV 4A 8-Pin(7+Tab) TO-263
Trans MOSFET N-CH SiC 3.3KV 4A 8-Pin(7+Tab) TO-263
auf Bestellung 3103 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 25.22 EUR |
| 100+ | 23.4 EUR |
| 250+ | 21.81 EUR |
| 500+ | 20.67 EUR |
| G2R1000MT33J |
|
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.38 EUR |
| 10+ | 32.9 EUR |
| 25+ | 31.59 EUR |
| 100+ | 29.73 EUR |
| 250+ | 28.56 EUR |
| 500+ | 27.7 EUR |
| G2R1000MT33J |
|
Hersteller: GeneSiC Semiconductor
MOSFET 3300V 1000mohm TO-263-7 G2R SiC MOSFET
MOSFET 3300V 1000mohm TO-263-7 G2R SiC MOSFET
auf Bestellung 2581 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.4 EUR |
| 10+ | 32.9 EUR |
| 25+ | 31.58 EUR |
| 100+ | 29.74 EUR |
| 250+ | 28.55 EUR |
| 500+ | 28.49 EUR |
| G2R1000MT33J |
|
Hersteller: GENESIC
Description: GENESIC - G2R1000MT33J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 4 A, 3.3 kV, 1 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 3.3kV
rohsCompliant: YES
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 74W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: G2R
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (17-Dec-2015)
Description: GENESIC - G2R1000MT33J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 4 A, 3.3 kV, 1 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 3.3kV
rohsCompliant: YES
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 74W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: G2R
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (17-Dec-2015)
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)