Technische Details G2R1000MT17J GeneSiC Semiconductor
Description: GENESIC - G2R1000MT17J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 5 A, 1.7 kV, 1.45 ohm, TO-263 (D2PAK), tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 1.7kV, rohsCompliant: YES, Dauer-Drainstrom Id: 5A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 5.5V, MOSFET-Modul-Konfiguration: Eins, Verlustleistung: 44W, SVHC: No SVHC (17-Dec-2015), Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 7Pin(s), Produktpalette: G2R Series, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 20V, Drain-Source-Durchgangswiderstand: 1.45ohm.
Weitere Produktangebote G2R1000MT17J nach Preis ab 6.12 EUR bis 13.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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G2R1000MT17J | GeneSiC Semiconductor |
 Trans MOSFET N-CH SiC 1.7KV 5A 8-Pin(7+Tab) TO-263 |
auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT17J | GeneSiC Semiconductor |
Trans MOSFET N-CH SiC 1.7KV 4A 8-Pin(7+Tab) TO-263 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 Case: TO263-7 Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V On-state resistance: 1Ω Drain current: 4A Pulsed drain current: 8A Power dissipation: 54W Drain-source voltage: 1.7kV Kind of package: tube Kind of channel: enhancement Technology: G2R™; SiC |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT17J | GeneSiC Semiconductor |
Trans MOSFET N-CH SiC 1.7KV 5A 8-Pin(7+Tab) TO-263 |
auf Bestellung 3810 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT17J | GeneSiC Semiconductor |
SiC MOSFETs 1700V 1000mohm TO-263-7 G2R SiC MOSFET |
auf Bestellung 3414 Stücke: Lieferzeit 10-14 Tag (e) |
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G2R1000MT17J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 3A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V |
auf Bestellung 11455 Stücke: Lieferzeit 10-14 Tag (e) |
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G2R1000MT17J | GENESIC |
Description: GENESIC - G2R1000MT17J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 5 A, 1.7 kV, 1.45 ohm, TO-263 (D2PAK) tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 5.5V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 44W SVHC: No SVHC (17-Dec-2015) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: G2R Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 1.45ohm |
auf Bestellung 2422 Stücke: Lieferzeit 14-21 Tag (e) |
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| G2R1000MT17J | GeneSiC Semiconductor |
Trans MOSFET N-CH SiC 1.7KV 4A 8-Pin(7+Tab) TO-263 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G2R1000MT17J |
|
Hersteller: GeneSiC Semiconductor
Trans MOSFET N-CH SiC 1.7KV 5A 8-Pin(7+Tab) TO-263
Trans MOSFET N-CH SiC 1.7KV 5A 8-Pin(7+Tab) TO-263
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 996+ | 6.12 EUR |
| G2R1000MT17J |
|
Hersteller: GeneSiC Semiconductor
Trans MOSFET N-CH SiC 1.7KV 4A 8-Pin(7+Tab) TO-263
Trans MOSFET N-CH SiC 1.7KV 4A 8-Pin(7+Tab) TO-263
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 7.47 EUR |
| G2R1000MT17J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Case: TO263-7
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of package: tube
Kind of channel: enhancement
Technology: G2R™; SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Case: TO263-7
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of package: tube
Kind of channel: enhancement
Technology: G2R™; SiC
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.1 EUR |
| 12+ | 7.28 EUR |
| G2R1000MT17J |
|
Hersteller: GeneSiC Semiconductor
Trans MOSFET N-CH SiC 1.7KV 5A 8-Pin(7+Tab) TO-263
Trans MOSFET N-CH SiC 1.7KV 5A 8-Pin(7+Tab) TO-263
auf Bestellung 3810 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.65 EUR |
| 25+ | 10.06 EUR |
| 50+ | 9.46 EUR |
| 100+ | 8.94 EUR |
| 250+ | 8.53 EUR |
| 500+ | 8.18 EUR |
| 1000+ | 7.78 EUR |
| 2500+ | 7.62 EUR |
| G2R1000MT17J |
|
Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1700V 1000mohm TO-263-7 G2R SiC MOSFET
SiC MOSFETs 1700V 1000mohm TO-263-7 G2R SiC MOSFET
auf Bestellung 3414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.58 EUR |
| 10+ | 10.36 EUR |
| 25+ | 9.67 EUR |
| 100+ | 9.29 EUR |
| 250+ | 8.9 EUR |
| 500+ | 8.6 EUR |
| 1000+ | 8.32 EUR |
| G2R1000MT17J |
|
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
auf Bestellung 11455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.54 EUR |
| 10+ | 11.23 EUR |
| 25+ | 10.75 EUR |
| 100+ | 10.07 EUR |
| 250+ | 9.64 EUR |
| 500+ | 9.33 EUR |
| 1000+ | 9.01 EUR |
| G2R1000MT17J |
|
Hersteller: GENESIC
Description: GENESIC - G2R1000MT17J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 5 A, 1.7 kV, 1.45 ohm, TO-263 (D2PAK)
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.5V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 44W
SVHC: No SVHC (17-Dec-2015)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: G2R Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 1.45ohm
Description: GENESIC - G2R1000MT17J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 5 A, 1.7 kV, 1.45 ohm, TO-263 (D2PAK)
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.5V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 44W
SVHC: No SVHC (17-Dec-2015)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: G2R Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 1.45ohm
auf Bestellung 2422 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 13.84 EUR |
| 20+ | 12.19 EUR |
| 21+ | 10.63 EUR |
| 50+ | 9.88 EUR |
| G2R1000MT17J |
|
Hersteller: GeneSiC Semiconductor
Trans MOSFET N-CH SiC 1.7KV 4A 8-Pin(7+Tab) TO-263
Trans MOSFET N-CH SiC 1.7KV 4A 8-Pin(7+Tab) TO-263
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.77 EUR |
| 18+ | 9.59 EUR |
| 25+ | 8.96 EUR |
| 100+ | 8.15 EUR |
| 250+ | 7.51 EUR |
| 500+ | 7.09 EUR |
| 1000+ | 6.69 EUR |