Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5634) > Seite 5 nach 94
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1N6096 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
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1N6096R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
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1N6097R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 30V 50A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 50A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A Current - Reverse Leakage @ Vr: 5 mA @ 30 V |
Produkt ist nicht verfügbar |
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1N6098R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 50A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 50A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A Current - Reverse Leakage @ Vr: 5 mA @ 30 V |
Produkt ist nicht verfügbar |
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2W005M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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2W01M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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2W02M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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2W04M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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2W06M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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2W08M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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2W10M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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BR101 | GeneSiC Semiconductor | Description: BRIDGE RECT 1P 100V 10A BR-10 |
Produkt ist nicht verfügbar |
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BR102 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 10A BR-10 Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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BR104 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 10A BR-10 Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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BR106 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 10A BR-10 Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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BR108 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 10A BR-10 Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 29 Stücke: Lieferzeit 21-28 Tag (e) |
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BR305 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 3A BR-3 Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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BR31 | GeneSiC Semiconductor | Description: DIODE BRIDGE 100V 3A BR-3 |
Produkt ist nicht verfügbar |
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BR310 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3 Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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BR32 | GeneSiC Semiconductor | Description: DIODE BRIDGE 200V 3A BR-3 |
Produkt ist nicht verfügbar |
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BR34 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 3A BR-3 Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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BR36 | GeneSiC Semiconductor | Description: DIODE BRIDGE 600V 3A BR-3 |
Produkt ist nicht verfügbar |
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BR38 | GeneSiC Semiconductor | Description: DIODE BRIDGE 800V 3A BR-3 |
Produkt ist nicht verfügbar |
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BR61 | GeneSiC Semiconductor | Description: DIODE BRIDGE 100V 6A BR-6 |
Produkt ist nicht verfügbar |
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BR610 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6 Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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BR62 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 6A BR-6 Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 1393 Stücke: Lieferzeit 21-28 Tag (e) |
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BR64 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 6A BR-6 Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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BR66 | GeneSiC Semiconductor | Description: DIODE BRIDGE 600V 6A BR-6 |
Produkt ist nicht verfügbar |
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BR68 | GeneSiC Semiconductor | Description: DIODE BRIDGE 800V 6A BR-6 |
Produkt ist nicht verfügbar |
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BR805 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 8A BR-8 Packaging: Bulk Package / Case: 4-Square, BR-8 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-8 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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BR81 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 8A BR-8 Packaging: Bulk Package / Case: 4-Square, BR-8 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-8 Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 446 Stücke: Lieferzeit 21-28 Tag (e) |
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BR82 | GeneSiC Semiconductor | Description: DIODE BRIDGE 200V 8A BR-8 |
Produkt ist nicht verfügbar |
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BR84 | GeneSiC Semiconductor | Description: DIODE BRIDGE 400V 8A BR-8 |
Produkt ist nicht verfügbar |
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BR86 | GeneSiC Semiconductor | Description: DIODE BRIDGE 600V 8A BR-8 |
Produkt ist nicht verfügbar |
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BR88 | GeneSiC Semiconductor | Description: DIODE BRIDGE 800V 8A BR-8 |
Produkt ist nicht verfügbar |
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DB101G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
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DB102G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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DB103G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 5651 Stücke: Lieferzeit 21-28 Tag (e) |
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DB104G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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DB105G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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DB106G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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DB107G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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FR12B02 | GeneSiC Semiconductor | Description: DIODE GEN PURP 100V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12B05 | GeneSiC Semiconductor | Description: DIODE GEN PURP 100V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12BR02 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 100V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12BR05 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 100V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
Produkt ist nicht verfügbar |
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FR12D05 | GeneSiC Semiconductor | Description: DIODE GEN PURP 200V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12DR02 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 200V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12DR05 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 200V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12G02 | GeneSiC Semiconductor | Description: DIODE GEN PURP 400V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12G05 | GeneSiC Semiconductor | Description: DIODE GEN PURP 400V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12GR02 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 400V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12GR05 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 400V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12J02 | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12J05 | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12JR02 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 600V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12JR05 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 600V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12K05 | GeneSiC Semiconductor | Description: DIODE GEN PURP 800V 12A DO4 |
Produkt ist nicht verfügbar |
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FR12KR05 | GeneSiC Semiconductor | Description: DIODE GEN PURP REV 800V 12A DO4 |
Produkt ist nicht verfügbar |
1N6096 |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE SCHOTTKY 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
1N6096R |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE SCHOTTKY REV 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
1N6097R |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Description: DIODE SCHOTTKY REV 30V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
1N6098R |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Description: DIODE SCHOTTKY REV 40V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
2W005M |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
2W01M |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
2W02M |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
2W04M |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
2W06M |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
2W08M |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
2W10M |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
BR101 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 10A BR-10
Description: BRIDGE RECT 1P 100V 10A BR-10
Produkt ist nicht verfügbar
BR102 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
BR104 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
BR106 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
BR108 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 29 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.49 EUR |
BR305 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
BR31 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 3A BR-3
Description: DIODE BRIDGE 100V 3A BR-3
Produkt ist nicht verfügbar
BR310 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
BR32 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 3A BR-3
Description: DIODE BRIDGE 200V 3A BR-3
Produkt ist nicht verfügbar
BR34 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
BR36 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 3A BR-3
Description: DIODE BRIDGE 600V 3A BR-3
Produkt ist nicht verfügbar
BR38 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 3A BR-3
Description: DIODE BRIDGE 800V 3A BR-3
Produkt ist nicht verfügbar
BR61 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 6A BR-6
Description: DIODE BRIDGE 100V 6A BR-6
Produkt ist nicht verfügbar
BR610 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
BR62 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1393 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.37 EUR |
10+ | 3.18 EUR |
25+ | 2.8 EUR |
100+ | 2.32 EUR |
250+ | 2.04 EUR |
500+ | 1.86 EUR |
1000+ | 1.69 EUR |
BR64 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
BR66 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 6A BR-6
Description: DIODE BRIDGE 600V 6A BR-6
Produkt ist nicht verfügbar
BR68 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 6A BR-6
Description: DIODE BRIDGE 800V 6A BR-6
Produkt ist nicht verfügbar
BR805 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
BR81 |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 446 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.86 EUR |
10+ | 3.62 EUR |
25+ | 3.22 EUR |
100+ | 2.7 EUR |
250+ | 2.4 EUR |
BR82 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 8A BR-8
Description: DIODE BRIDGE 200V 8A BR-8
Produkt ist nicht verfügbar
BR84 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 8A BR-8
Description: DIODE BRIDGE 400V 8A BR-8
Produkt ist nicht verfügbar
BR86 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 8A BR-8
Description: DIODE BRIDGE 600V 8A BR-8
Produkt ist nicht verfügbar
BR88 |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 8A BR-8
Description: DIODE BRIDGE 800V 8A BR-8
Produkt ist nicht verfügbar
DB101G |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
DB102G |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
DB103G |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 5651 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.09 EUR |
15+ | 1.82 EUR |
25+ | 1.47 EUR |
100+ | 1.07 EUR |
250+ | 0.87 EUR |
500+ | 0.74 EUR |
1000+ | 0.63 EUR |
2500+ | 0.51 EUR |
DB104G |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
DB105G |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
DB106G |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
DB107G |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
FR12B02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
Description: DIODE GEN PURP 100V 12A DO4
Produkt ist nicht verfügbar
FR12B05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
Description: DIODE GEN PURP 100V 12A DO4
Produkt ist nicht verfügbar
FR12BR02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
FR12BR05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
FR12D02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar
FR12D05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Description: DIODE GEN PURP 200V 12A DO4
Produkt ist nicht verfügbar
FR12DR02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Description: DIODE GEN PURP REV 200V 12A DO4
Produkt ist nicht verfügbar
FR12DR05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Description: DIODE GEN PURP REV 200V 12A DO4
Produkt ist nicht verfügbar
FR12G02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
Produkt ist nicht verfügbar
FR12G05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
Produkt ist nicht verfügbar
FR12GR02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Description: DIODE GEN PURP REV 400V 12A DO4
Produkt ist nicht verfügbar
FR12GR05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Description: DIODE GEN PURP REV 400V 12A DO4
Produkt ist nicht verfügbar
FR12J02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
Produkt ist nicht verfügbar
FR12J05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
Produkt ist nicht verfügbar
FR12JR02 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Description: DIODE GEN PURP REV 600V 12A DO4
Produkt ist nicht verfügbar
FR12JR05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Description: DIODE GEN PURP REV 600V 12A DO4
Produkt ist nicht verfügbar
FR12K05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
Description: DIODE GEN PURP 800V 12A DO4
Produkt ist nicht verfügbar
FR12KR05 |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 12A DO4
Description: DIODE GEN PURP REV 800V 12A DO4
Produkt ist nicht verfügbar