Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5694) > Seite 5 nach 95
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| 2W04M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2W06M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2W08M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2W10M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR101 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 10A BR-10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR102 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR104 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 4962 Stücke: Lieferzeit 10-14 Tag (e) |
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| BR106 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR108 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR305 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 3A BR-3Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR31 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 3A BR-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR310 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR32 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 200V 3A BR-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR34 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 3A BR-3Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR36 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 3A BR-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR38 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 800V 3A BR-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR61 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 6A BR-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR610 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BR62 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 1136 Stücke: Lieferzeit 10-14 Tag (e) |
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| BR64 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR66 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 6A BR-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR68 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BR805 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 8A BR-8Packaging: Bulk Package / Case: 4-Square, BR-8 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-8 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BR81 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 8A BR-8Packaging: Bulk Package / Case: 4-Square, BR-8 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-8 Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 369 Stücke: Lieferzeit 10-14 Tag (e) |
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| BR82 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 200V 8A BR-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR84 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 400V 8A BR-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR86 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 8A BR-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BR88 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 800V 8A BR-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DB101G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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| DB102G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DB103G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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| DB104G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 2357 Stücke: Lieferzeit 10-14 Tag (e) |
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| DB105G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DB106G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DB107G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12B02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12B05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12BR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12BR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12D05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12DR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12DR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12G02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FR12G05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FR12GR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12GR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12J02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12J05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FR12JR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FR12JR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12K05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR12KR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 800V 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FR12M05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 12A DO4 |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FR12MR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV 12A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR16B02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 16A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR16B05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 16A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR16BR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 16A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR16BR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 16A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FR16D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 16A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2W04M |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2W06M |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2W08M |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2W10M |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR101 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 10A BR-10
Description: BRIDGE RECT 1P 100V 10A BR-10
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR102 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR104 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 2.51 EUR |
| 25+ | 2.24 EUR |
| 100+ | 1.88 EUR |
| 250+ | 1.68 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.41 EUR |
| 2500+ | 1.26 EUR |
| BR106 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR108 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR305 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR31 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 3A BR-3
Description: DIODE BRIDGE 100V 3A BR-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR310 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR32 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 3A BR-3
Description: DIODE BRIDGE 200V 3A BR-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR34 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR36 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 3A BR-3
Description: DIODE BRIDGE 600V 3A BR-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR38 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 3A BR-3
Description: DIODE BRIDGE 800V 3A BR-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR61 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 6A BR-6
Description: DIODE BRIDGE 100V 6A BR-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR610 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR62 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1136 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.75 EUR |
| 10+ | 2 EUR |
| 25+ | 1.76 EUR |
| 100+ | 1.46 EUR |
| 250+ | 1.28 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.06 EUR |
| BR64 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR66 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 6A BR-6
Description: DIODE BRIDGE 600V 6A BR-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR68 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR805 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR81 |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.04 EUR |
| 10+ | 2.28 EUR |
| 25+ | 2.02 EUR |
| 100+ | 1.7 EUR |
| 250+ | 1.51 EUR |
| BR82 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 8A BR-8
Description: DIODE BRIDGE 200V 8A BR-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR84 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 8A BR-8
Description: DIODE BRIDGE 400V 8A BR-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR86 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 8A BR-8
Description: DIODE BRIDGE 600V 8A BR-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR88 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 8A BR-8
Description: DIODE BRIDGE 800V 8A BR-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DB101G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 15+ | 1.18 EUR |
| 25+ | 0.96 EUR |
| 100+ | 0.7 EUR |
| 250+ | 0.56 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.41 EUR |
| DB102G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DB103G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.18 EUR |
| 14+ | 1.29 EUR |
| 25+ | 1.04 EUR |
| 100+ | 0.76 EUR |
| 250+ | 0.61 EUR |
| DB104G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2357 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| 16+ | 1.15 EUR |
| 25+ | 0.93 EUR |
| 100+ | 0.68 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| DB105G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DB106G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DB107G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12B02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
Description: DIODE GEN PURP 100V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12B05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
Description: DIODE GEN PURP 100V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12BR02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12BR05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12D02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12D05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Description: DIODE GEN PURP 200V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12DR02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Description: DIODE GEN PURP REV 200V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12DR05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Description: DIODE GEN PURP REV 200V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12G02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12G05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12GR02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Description: DIODE GEN PURP REV 400V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12GR05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Description: DIODE GEN PURP REV 400V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12J02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12J05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12JR02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Description: DIODE GEN PURP REV 600V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12JR05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Description: DIODE GEN PURP REV 600V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12K05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
Description: DIODE GEN PURP 800V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12KR05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 12A DO4
Description: DIODE GEN PURP REV 800V 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR12M05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 12A DO4
Description: DIODE GEN PURP 1KV 12A DO4
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FR12MR05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 12A DO4
Description: DIODE GEN PURP REV 1KV 12A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR16B02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 16A DO4
Description: DIODE GEN PURP 100V 16A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR16B05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 16A DO4
Description: DIODE GEN PURP 100V 16A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR16BR02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 16A DO4
Description: DIODE GEN PURP REV 100V 16A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR16BR05 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 16A DO4
Description: DIODE GEN PURP REV 100V 16A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FR16D02 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 16A DO4
Description: DIODE GEN PURP 200V 16A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
