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MBRT30020 MBRT30020 mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT30020R MBRT30020R mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 300A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30020
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT30030 MBRT30030 mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT30030R MBRT30030R mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30030
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR10005CT mur10005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR10005CTR mur10005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 100A 2TOWER
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR10010CT mur10005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 100A 2TOWER
Base Part Number: MUR10010
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10010CTR mur10005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 100A 2TOWER
Base Part Number: MUR10010
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10020CT mur10005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 100A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MUR10020
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10020CTR mur10005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 100A 2TOWER
Base Part Number: MUR10020
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR10040CT mur10040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 100A 2TOWER
Base Part Number: MUR10040
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR10040CTR mur10040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 100A 2TOWER
Base Part Number: MUR10040
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10060CT mur10040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 100A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10060CTR mur10040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 100A 2TOWER
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR120100CT MBR120100CT mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR120100CTR MBR120100CTR mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 120A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12035CTR mbr12035ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 120A 2TOWER
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12080CT mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 120A 2TOWER
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12080CTR mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 120A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200100CT mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200100CTR mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20020CT mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20020CTR mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR20035CT mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Mounting Type: Chassis Mount
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20035CTR mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 200A 2TOWER
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20040CT mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 200A 2TOWER
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20040CTR mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20045CT mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20045CTR mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 200A 2TOWER
Supplier Device Package: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20060CT mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20060CTR mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR20080CT mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 200A 2TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20080CTR mbr200100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 200A 2TOWER
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST160100 FST160100 fst16045_thru_fst160100.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16020 FST16020 fst16020.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 160A TO249AB
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16030 FST16030 fst16020_thru_fst16040.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16040 FST16040 fst16020_thru_fst16040.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16045 FST16045 fst160100.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 160A TO249AB
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16060 FST16060 fst16045_thru_fst160100.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16080 FST16080 fst16045_thru_fst160100.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300100CT mbr300100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 300A 2TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300100CTR mbr300100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 300A 2TOWER
Packaging: Bulk
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30020CT MBR30020CT mbr30020ct_thru_mbr30040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30020CTR MBR30020CTR mbr30020ct_thru_mbr30040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30030CT MBR30030CT mbr30020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 300A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR30030
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30030CTR MBR30030CTR mbr30020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 300A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR30030
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30040CT mbr30020ct_thru_mbr30040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30040CTR mbr30020ct_thru_mbr30040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30045CT MBR30045CT mbr30045ct_thru_mbr300100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 300A 2TOWER
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30045CTR mbr30045ct_thru_mbr300100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30060CT mbr300100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30060CTR mbr300100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 300A 2TOWER
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30080CT mbr30045ct_thru_mbr300100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30080CTR mbr30045ct_thru_mbr300100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20045 MBRT20045 mbrt20045_thru_mbrt200100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 200A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20045R MBRT20045R mbrt20045_thru_mbrt200100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20060 MBRT20060 mbrt200100.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20060R MBRT20060R mbrt200100.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20080 MBRT20080 mbrt20045_thru_mbrt200100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 200A 3TOWER
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20080R MBRT20080R mbrt20045_thru_mbrt200100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 200A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40020 MBRT40020 mbrt40020_thru_mbrt40040r.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 400A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40020R MBRT40020R mbrt40020_thru_mbrt40040r.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030 MBRT40030 mbrt40020_thru_mbrt40040r.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030R MBRT40030R mbrt40020_thru_mbrt40040r.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40060 MBRT40060 mbrt40045_thru_mbrt400100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
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MBRT40060R MBRT40060R mbrt400100.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT40080 MBRT40080 mbrt40045_thru_mbrt400100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 400A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT40080R MBRT40080R mbrt40045_thru_mbrt400100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30005CT mur30005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30005CTR mur30005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 300A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30010CT mur30005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30010CTR mur30005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 300A 2TOWER
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30020CTR mur30005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 300A 2TOWER
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30040CT mur30040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30040CTR mur30040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30060CT mur30040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 300A 2TOWER
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR30060CTR mur30040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURT10005 MURT10005 murt10005.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 100A 3TOWER
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURT10005R MURT10005R murt10005.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 100A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURT10010 MURT10010 murt10005_thru_murt10020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 100A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT10010R MURT10010R murt10005_thru_murt10020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 100A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10005 GeneSiC Semiconductor Description: DIODE MODULE 50V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10005R GeneSiC Semiconductor Description: DIODE MODULE 50V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10010 GeneSiC Semiconductor Description: DIODE MODULE 100V 100A TO244
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10010R GeneSiC Semiconductor Description: DIODE MODULE 100V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10020 GeneSiC Semiconductor Description: DIODE MODULE 200V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10020R GeneSiC Semiconductor Description: DIODE MODULE 200V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF10040 MURF10040 GeneSiC Semiconductor Description: DIODE MODULE 400V 100A TO244AB
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF10040R MURF10040R GeneSiC Semiconductor Description: DIODE MODULE 400V 100A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF10060 MURF10060 GeneSiC Semiconductor Description: DIODE MODULE 600V 100A TO244AB
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10060R MURF10060R GeneSiC Semiconductor Description: DIODE MODULE 600V 100A TO244AB
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CT MBR40045CT mbr40045ct_thru_mbr400100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 400A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR40045CTR MBR40045CTR mbr40045ct_thru_mbr400100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 400A 2TOWER
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR40060CT MBR40060CT mbr400100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 400A 2TOWER
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR40060CTR MBR40060CTR mbr400100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 400A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR40080CT MBR40080CT mbr40045ct_thru_mbr400100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40080CTR MBR40080CTR mbr40045ct_thru_mbr400100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 400A 2TOWER
Diode Type: Schottky
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30060 MBRT30060 mbrt300100.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30060R MBRT30060R mbrt300100.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: MBRT30060
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 800mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30080 MBRT30080 mbrt30045_thru_mbrt300100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30020 mbrt30020.pdf
MBRT30020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30020R mbrt30020.pdf
MBRT30020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30020
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30030 mbrt30020.pdf
MBRT30030
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30030R mbrt30020.pdf
MBRT30030R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30030
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10005CT mur10005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 100A 2TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10005CTR mur10005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 100A 2TOWER
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10010CT mur10005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 100A 2TOWER
Base Part Number: MUR10010
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10010CTR mur10005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 100A 2TOWER
Base Part Number: MUR10010
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10020CT mur10005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 100A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MUR10020
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4259 Stücke - Preis und Lieferfrist anzeigen
MUR10020CTR mur10005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 100A 2TOWER
Base Part Number: MUR10020
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10040CT mur10040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 100A 2TOWER
Base Part Number: MUR10040
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
MUR10040CTR mur10040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 100A 2TOWER
Base Part Number: MUR10040
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10060CT mur10040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR10060CTR mur10040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 2TOWER
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR120100CT mbr120100ct.pdf
MBR120100CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR120100CTR mbr120100ct.pdf
MBR120100CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 120A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12035CTR mbr12035ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 120A 2TOWER
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12080CT mbr120100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 120A 2TOWER
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12080CTR mbr120100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 120A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200100CT mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200100CTR mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20020CT mbr20020ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20020CTR mbr20020ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20035CT mbr20020ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Mounting Type: Chassis Mount
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20035CTR mbr20020ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20040CT mbr20020ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 65 Stücke - Preis und Lieferfrist anzeigen
MBR20040CTR mbr20020ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20045CT mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 311 Stücke - Preis und Lieferfrist anzeigen
MBR20045CTR mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 2TOWER
Supplier Device Package: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20060CT mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
MBR20060CTR mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20080CT mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 200A 2TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20080CTR mbr200100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 200A 2TOWER
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST160100 fst16045_thru_fst160100.pdf
FST160100
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16020 fst16020.pdf
FST16020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 160A TO249AB
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16030 fst16020_thru_fst16040.pdf
FST16030
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16040 fst16020_thru_fst16040.pdf
FST16040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16045 fst160100.pdf
FST16045
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 160A TO249AB
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16060 fst16045_thru_fst160100.pdf
FST16060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16080 fst16045_thru_fst160100.pdf
FST16080
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 160A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 160A
Current - Average Rectified (Io) (per Diode): 160A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300100CT mbr300100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 690 Stücke - Preis und Lieferfrist anzeigen
MBR300100CTR mbr300100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
Packaging: Bulk
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30020CT mbr30020ct_thru_mbr30040ctr.pdf
MBR30020CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30020CTR mbr30020ct_thru_mbr30040ctr.pdf
MBR30020CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30030CT mbr30020ct.pdf
MBR30030CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR30030
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30030CTR mbr30020ct.pdf
MBR30030CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 8mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR30030
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30040CT mbr30020ct_thru_mbr30040ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30040CTR mbr30020ct_thru_mbr30040ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30045CT mbr30045ct_thru_mbr300100ctr.pdf
MBR30045CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4506 Stücke - Preis und Lieferfrist anzeigen
MBR30045CTR mbr30045ct_thru_mbr300100ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30060CT mbr300100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 165 Stücke - Preis und Lieferfrist anzeigen
MBR30060CTR mbr300100ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30080CT mbr30045ct_thru_mbr300100ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30080CTR mbr30045ct_thru_mbr300100ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20045 mbrt20045_thru_mbrt200100r.pdf
MBRT20045
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
MBRT20045R mbrt20045_thru_mbrt200100r.pdf
MBRT20045R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20060 mbrt200100.pdf
MBRT20060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20060R mbrt200100.pdf
MBRT20060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20080 mbrt20045_thru_mbrt200100r.pdf
MBRT20080
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 200A 3TOWER
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20080R mbrt20045_thru_mbrt200100r.pdf
MBRT20080R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 200A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40020 mbrt40020_thru_mbrt40040r.pdf
MBRT40020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 400A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40020R mbrt40020_thru_mbrt40040r.pdf
MBRT40020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030 mbrt40020_thru_mbrt40040r.pdf
MBRT40030
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030R mbrt40020_thru_mbrt40040r.pdf
MBRT40030R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40060 mbrt40045_thru_mbrt400100r.pdf
MBRT40060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
MBRT40060R mbrt400100.pdf
MBRT40060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40080 mbrt40045_thru_mbrt400100r.pdf
MBRT40080
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 400A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40080R mbrt40045_thru_mbrt400100r.pdf
MBRT40080R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30005CT mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30005CTR mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30010CT mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30010CTR mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30020CTR mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 2TOWER
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30040CT mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30040CTR mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30060CT mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 2TOWER
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30060CTR mur30040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT10005 murt10005.pdf
MURT10005
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 100A 3TOWER
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT10005R murt10005.pdf
MURT10005R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 100A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT10010 murt10005_thru_murt10020r.pdf
MURT10010
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 100A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT10010R murt10005_thru_murt10020r.pdf
MURT10010R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 100A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10005
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10005R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10010
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 100A TO244
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10010R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 100A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10040
MURF10040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 100A TO244AB
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10040R
MURF10040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 100A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10060
MURF10060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A TO244AB
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF10060R
MURF10060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A TO244AB
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CT mbr40045ct_thru_mbr400100ctr.pdf
MBR40045CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CTR mbr40045ct_thru_mbr400100ctr.pdf
MBR40045CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 2TOWER
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40060CT mbr400100ct.pdf
MBR40060CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 400A 2TOWER
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40060CTR mbr400100ct.pdf
MBR40060CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 400A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40080CT mbr40045ct_thru_mbr400100ctr.pdf
MBR40080CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40080CTR mbr40045ct_thru_mbr400100ctr.pdf
MBR40080CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 400A 2TOWER
Diode Type: Schottky
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30060 mbrt300100.pdf
MBRT30060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30060R mbrt300100.pdf
MBRT30060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: MBRT30060
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 800mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30080 mbrt30045_thru_mbrt300100r.pdf
MBRT30080
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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