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1N8026-GA

1N8026-GA GeneSiC Semiconductor

1N8026-GA.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 8A TO257
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-257-3
Packaging: Tube
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Technische Details 1N8026-GA GeneSiC Semiconductor

Description: DIODE SIL CARBIDE 1.2KV 8A TO257, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 250°C, Supplier Device Package: TO-257, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 237pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-257-3, Packaging: Tube.