1N5829R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 25A DO4
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 25A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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Technische Details 1N5829R GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 25A DO4, Current - Reverse Leakage @ Vr: 2 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A, Voltage - DC Reverse (Vr) (Max): 20 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 25A, Technology: Schottky, Reverse Polarity, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.
Weitere Produktangebote 1N5829R
| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5829R | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 20V - 25A Schottky Rectifier |
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