Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5640) > Seite 4 nach 94
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 1N1183R | GeneSiC Semiconductor |
 Description: DIODE GEN PURP REV 50V 35A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N1186 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 35A DO5 |
Produkt ist nicht verfügbar |
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1N1186R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 35A DO5 |
Produkt ist nicht verfügbar |
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| 1N1188AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N1189R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N1202AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N2128A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 60A DO5 |
Produkt ist nicht verfügbar |
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| 1N2128AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 60A DO5 |
Produkt ist nicht verfügbar |
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| 1N2129A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N2129AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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1N2131AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 60A DO5 |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1N2133AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 300V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N2135A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 60A DO5 |
Produkt ist nicht verfügbar |
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| 1N2135AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 60A DO5 |
Produkt ist nicht verfügbar |
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| 1N2137A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 500V 60A DO5 |
Produkt ist nicht verfügbar |
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| 1N2137AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 500V 60A DO5 |
Produkt ist nicht verfügbar |
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| 1N3208 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N3208R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N3209 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 15A DO5 |
Produkt ist nicht verfügbar |
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| 1N3209R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 15A DO5 |
Produkt ist nicht verfügbar |
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1N3210 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 15A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1N3212 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 15A DO5 |
Produkt ist nicht verfügbar |
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| 1N3212R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 15A DO5 |
Produkt ist nicht verfügbar |
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| 1N3213 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 500V 15A DO5 |
Produkt ist nicht verfügbar |
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| 1N3213R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 500V 15A DO5 |
Produkt ist nicht verfügbar |
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| 1N3289AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 100A DO205AA |
Produkt ist nicht verfügbar |
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| 1N3291A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 100A DO205AA |
Produkt ist nicht verfügbar |
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| 1N3291AR | GeneSiC Semiconductor |
Description: DIODE GEN REV 400V 100A DO205AA |
Produkt ist nicht verfügbar |
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| 1N3293AR | GeneSiC Semiconductor |
Description: DIODE GEN REV 600V 100A DO205AA |
Produkt ist nicht verfügbar |
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| 1N3294A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 100A DO205AA |
Produkt ist nicht verfügbar |
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| 1N3294AR | GeneSiC Semiconductor |
Description: DIODE GEN REV 800V 100A DO205AA |
Produkt ist nicht verfügbar |
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| 1N3296AR | GeneSiC Semiconductor |
Description: DIODE GP REV 1.2KV 100A DO205AA Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 100A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Current - Reverse Leakage @ Vr: 9 mA @ 1200 V |
Produkt ist nicht verfügbar |
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| 1N3297A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.4KV 100A DO205 |
Produkt ist nicht verfügbar |
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| 1N3297AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1.4KV DO205AA |
Produkt ist nicht verfügbar |
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| 1N3765 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 700V 35A DO5 |
Produkt ist nicht verfügbar |
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| 1N3765R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 700V 35A DO5 |
Produkt ist nicht verfügbar |
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| 1N3766 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N3766R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 800V 35A DO5 |
Produkt ist nicht verfügbar |
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| 1N3767 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 900V 35A DO5 |
Produkt ist nicht verfügbar |
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| 1N3767R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 900V 35A DO5 |
Produkt ist nicht verfügbar |
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| 1N3890R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 12A DO4 |
Produkt ist nicht verfügbar |
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1N3891 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
auf Bestellung 923 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1N3891R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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1N3893R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1N5826R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 20V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 15 A Current - Reverse Leakage @ Vr: 10 mA @ 20 V |
Produkt ist nicht verfügbar |
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| 1N5827R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 30V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A Current - Reverse Leakage @ Vr: 10 mA @ 20 V |
Produkt ist nicht verfügbar |
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| 1N5828R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 15 A Current - Reverse Leakage @ Vr: 10 mA @ 20 V |
Produkt ist nicht verfügbar |
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| 1N5829R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 20V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
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| 1N5830 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 25V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
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| 1N5830R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 25V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
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| 1N5831 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 25A DO4 |
Produkt ist nicht verfügbar |
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| 1N5831R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 35V 25A DO4 |
Produkt ist nicht verfügbar |
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| 1N5832 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 40A DO5 |
Produkt ist nicht verfügbar |
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| 1N5832R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 20V 40A DO5 |
Produkt ist nicht verfügbar |
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| 1N5833 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A Current - Reverse Leakage @ Vr: 20 mA @ 10 V |
Produkt ist nicht verfügbar |
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| 1N5833R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 30V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A Current - Reverse Leakage @ Vr: 20 mA @ 10 V |
Produkt ist nicht verfügbar |
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| 1N5834 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 40A DO5 |
Produkt ist nicht verfügbar |
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| 1N5834R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 40A DO5 |
Produkt ist nicht verfügbar |
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| 1N6095 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
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1N6095R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 30V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
| 1N1183R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 50V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N1186 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 35A DO5
Description: DIODE GEN PURP 200V 35A DO5
Produkt ist nicht verfügbar
| 1N1186R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 35A DO5
Description: DIODE GEN PURP REV 200V 35A DO5
Produkt ist nicht verfügbar
| 1N1188AR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N1189R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 600V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N1202AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 200V 12A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N2128A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 60A DO5
Description: DIODE GEN PURP 50V 60A DO5
Produkt ist nicht verfügbar
| 1N2128AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 60A DO5
Description: DIODE GEN PURP REV 50V 60A DO5
Produkt ist nicht verfügbar
| 1N2129A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N2129AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N2131AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 60A DO5
Description: DIODE GEN PURP REV 200V 60A DO5
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)| 1N2133AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N2135A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 60A DO5
Description: DIODE GEN PURP 400V 60A DO5
Produkt ist nicht verfügbar
| 1N2135AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 60A DO5
Description: DIODE GEN PURP REV 400V 60A DO5
Produkt ist nicht verfügbar
| 1N2137A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 500V 60A DO5
Description: DIODE GEN PURP 500V 60A DO5
Produkt ist nicht verfügbar
| 1N2137AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 500V 60A DO5
Description: DIODE GEN PURP REV 500V 60A DO5
Produkt ist nicht verfügbar
| 1N3208 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N3208R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N3209 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 15A DO5
Description: DIODE GEN PURP 100V 15A DO5
Produkt ist nicht verfügbar
| 1N3209R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 15A DO5
Description: DIODE GEN PURP REV 100V 15A DO5
Produkt ist nicht verfügbar
| 1N3210 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 15A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 200V 15A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.98 EUR |
| 1N3212 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 15A DO5
Description: DIODE GEN PURP 400V 15A DO5
Produkt ist nicht verfügbar
| 1N3212R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 15A DO5
Description: DIODE GEN PURP REV 400V 15A DO5
Produkt ist nicht verfügbar
| 1N3213 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 500V 15A DO5
Description: DIODE GEN PURP 500V 15A DO5
Produkt ist nicht verfügbar
| 1N3213R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 500V 15A DO5
Description: DIODE GEN PURP REV 500V 15A DO5
Produkt ist nicht verfügbar
| 1N3289AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 100A DO205AA
Description: DIODE GEN PURP 200V 100A DO205AA
Produkt ist nicht verfügbar
| 1N3291A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 100A DO205AA
Description: DIODE GEN PURP 400V 100A DO205AA
Produkt ist nicht verfügbar
| 1N3291AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN REV 400V 100A DO205AA
Description: DIODE GEN REV 400V 100A DO205AA
Produkt ist nicht verfügbar
| 1N3293AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN REV 600V 100A DO205AA
Description: DIODE GEN REV 600V 100A DO205AA
Produkt ist nicht verfügbar
| 1N3294A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 100A DO205AA
Description: DIODE GEN PURP 800V 100A DO205AA
Produkt ist nicht verfügbar
| 1N3294AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN REV 800V 100A DO205AA
Description: DIODE GEN REV 800V 100A DO205AA
Produkt ist nicht verfügbar
| 1N3296AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GP REV 1.2KV 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
Description: DIODE GP REV 1.2KV 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
Produkt ist nicht verfügbar
| 1N3297A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 100A DO205
Description: DIODE GEN PURP 1.4KV 100A DO205
Produkt ist nicht verfügbar
| 1N3297AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.4KV DO205AA
Description: DIODE GEN PURP REV 1.4KV DO205AA
Produkt ist nicht verfügbar
| 1N3765 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 700V 35A DO5
Description: DIODE GEN PURP 700V 35A DO5
Produkt ist nicht verfügbar
| 1N3765R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 700V 35A DO5
Description: DIODE GEN PURP REV 700V 35A DO5
Produkt ist nicht verfügbar
| 1N3766 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 800V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N3766R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 35A DO5
Description: DIODE GEN PURP REV 800V 35A DO5
Produkt ist nicht verfügbar
| 1N3767 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 900V 35A DO5
Description: DIODE GEN PURP 900V 35A DO5
Produkt ist nicht verfügbar
| 1N3767R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 900V 35A DO5
Description: DIODE GEN PURP REV 900V 35A DO5
Produkt ist nicht verfügbar
| 1N3890R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
| 1N3891 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.12 EUR |
| 10+ | 12.27 EUR |
| 25+ | 11.29 EUR |
| 100+ | 9.96 EUR |
| 250+ | 9.16 EUR |
| 1N3891R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP REV 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| 1N3893R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP REV 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.47 EUR |
| 10+ | 13.37 EUR |
| 25+ | 12.31 EUR |
| 1N5826R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Description: DIODE SCHOTTKY REV 20V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Produkt ist nicht verfügbar
| 1N5827R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Description: DIODE SCHOTTKY REV 30V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Produkt ist nicht verfügbar
| 1N5828R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Description: DIODE SCHOTTKY REV 40V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Produkt ist nicht verfügbar
| 1N5829R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE SCHOTTKY REV 20V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
| 1N5830 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 25V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE SCHOTTKY 25V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
| 1N5830R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 25V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE SCHOTTKY REV 25V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
| 1N5831 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 25A DO4
Description: DIODE SCHOTTKY 35V 25A DO4
Produkt ist nicht verfügbar
| 1N5831R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 25A DO4
Description: DIODE SCHOTTKY REV 35V 25A DO4
Produkt ist nicht verfügbar
| 1N5832 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 40A DO5
Description: DIODE SCHOTTKY 20V 40A DO5
Produkt ist nicht verfügbar
| 1N5832R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 40A DO5
Description: DIODE SCHOTTKY REV 20V 40A DO5
Produkt ist nicht verfügbar
| 1N5833 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 10 V
Description: DIODE SCHOTTKY 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 10 V
Produkt ist nicht verfügbar
| 1N5833R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 10 V
Description: DIODE SCHOTTKY REV 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 10 V
Produkt ist nicht verfügbar
| 1N5834 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 40A DO5
Description: DIODE SCHOTTKY 40V 40A DO5
Produkt ist nicht verfügbar
| 1N5834R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 40A DO5
Description: DIODE SCHOTTKY REV 40V 40A DO5
Produkt ist nicht verfügbar
| 1N6095 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE SCHOTTKY 30V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
| 1N6095R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE SCHOTTKY REV 30V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar