
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 20.84 EUR |
10+ | 18.74 EUR |
50+ | 17.07 EUR |
100+ | 15.40 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N3766 GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 35A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-5, Operating Temperature - Junction: -65°C ~ 190°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Weitere Produktangebote 1N3766
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
1N3766 | Hersteller : GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |