Die Produkte genesic semiconductor
| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung |
Informationen zu Lagerverfügbarkeit und Lieferzeiten |
Preis ohne MwSt |
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MBRT30080R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 80V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 80V Diode Type: Schottky |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40005CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 400A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40005CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 400A 2TOWER Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 50 V Current - Reverse Leakage @ Vr: 25 µA @ 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40010CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 2TOWER Package / Case: Twin Tower Packaging: Bulk Mounting Type: Chassis Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40010CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 90 ns Diode Type: Standard Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40020CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 400A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Diode Type: Standard Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40020CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 400A 2TOWER Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40040CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 400A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40040CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 400A 2TOWER Current - Reverse Leakage @ Vr: 25 µA @ 50 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 150 ns |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40060CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 400A 2TOWER Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 180 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Diode Type: Standard Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR40060CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 400A 2TOWER Reverse Recovery Time (trr): 180 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Anode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRF40035 | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 400A TO244AB Supplier Device Package: TO-244AB Package / Case: TO-244AB Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 5mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk Manufacturer: GeneSiC Semiconductor |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRF40035R | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 400A TO244AB Supplier Device Package: TO-244AB Package / Case: TO-244AB Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 5mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Obsolete Packaging: Bulk Manufacturer: GeneSiC Semiconductor |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20005CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A 2TOWER Mounting Type: Chassis Mount Supplier Device Package: Twin Tower Package / Case: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20005CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A 2TOWER Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Obsolete Packaging: Bulk Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20020CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20020CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 200A 2TOWER Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20040CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A 2TOWER Part Status: Active Packaging: Bulk Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 90ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20040CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A 2TOWER Packaging: Bulk Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 90ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 400V Part Status: Active Diode Configuration: 1 Pair Common Anode Diode Type: Schottky |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20060CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 200A 2TOWER Packaging: Bulk Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 110ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR20060CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 200A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 110ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A Packaging: Bulk Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20005 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20005R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A 3TOWER Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20010 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20010R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20020 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 200A 3TOWER Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode Part Status: Active Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Packaging: Bulk Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20020R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200A 3TOWER Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20040 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 90ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20040R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 90ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20060 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 160ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT20060R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 160ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MURF20005 | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A TO244 Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MURF20005R | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A TO244 Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 75 ns Package / Case: TO-244AB Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MURF20010 | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A TO244 Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 25 µA @ 50 V Supplier Device Package: TO-244 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MURF20010R | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A TO244 Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MURF20020 | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 200A TO244 Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MURF20020R | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 200A TO244 Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURF20040 | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A TO244AB Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244AB Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURF20040R | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A TO244AB Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244AB Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURF20060 | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 200A TO244AB Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244AB Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURF20060R | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 200A TO244AB Current - Reverse Leakage @ Vr: 25 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244AB Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR500100CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 500A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 100V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR500100CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 500A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky, Reverse Polarity Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50020CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 20V 500A 2TOWER Current - Average Rectified (Io) (per Diode): 250A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50020CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 20V 500A 2TOWER Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 250A Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50030CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 30V 500A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50030CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 30V 500A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50035CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 35V 500A 2TOWER Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50035CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 35V 500A 2TOWER Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 35V Supplier Device Package: Twin Tower Diode Type: Schottky Package / Case: Twin Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50040CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 40V 500A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50040CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 40V 500A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50045CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 45V 500A 2TOWER Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 15 Stücke  Lieferzeit 21-28 Tag (e) |
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MBR50045CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 45V 500A 2TOWER Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky, Reverse Polarity Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50060CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 500A 2TOWER Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 250A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50060CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 500A 2TOWER Part Status: Obsolete Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 250A Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50080CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 80V 500A 2TOWER Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 250A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR50080CTR |
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GeneSiC Semiconductor |
Description: DIODE MODULE 80V 500A 2TOWER Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 250A Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30005 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30005R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30010 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 300A 3TOWER Manufacturer: GeneSiC Semiconductor Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 50V Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30010R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Current - Reverse Leakage @ Vr: 25µA @ 50V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30020 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 300A 3TOWER Package / Case: Three Tower Mounting Type: Chassis Mount Supplier Device Package: Three Tower Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30020R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30040 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Diode Type: Standard Diode Configuration: 1 Pair Common Cathode Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 400V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30040R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30060 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 200ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT30060R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 300A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 200ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT40040 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 40V 400A 3TOWER Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT40040R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 40V 400A 3TOWER Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 20V Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| MUR30020CT |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT500100 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 500A 3TOWER Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT500100R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 500A 3TOWER Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50020 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 20V 500A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Manufacturer: GeneSiC Semiconductor Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 20V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50020R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 20V 500A 3TOWER Speed: Fast Recovery =< 500ns, > 200mA (Io) Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 20V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Obsolete Packaging: Bulk Manufacturer: GeneSiC Semiconductor |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50030 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 30V 500A 3TOWER Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50030R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 30V 500A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 30V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50035 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 35V 500A 3TOWER Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50035R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 35V 500A 3TOWER Part Status: Active Packaging: Bulk Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50040 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 40V 500A 3TOWER Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50040R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 40V 500A 3TOWER Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50045 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 45V 500A 3TOWER Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50045R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 45V 500A 3TOWER Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 45V Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50060 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 60V 500A 3TOWER Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 60V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50060R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 60V 500A 3TOWER Voltage - DC Reverse (Vr) (Max): 60V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50080 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 80V 500A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 80V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT50080R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 80V 500A 3TOWER Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 80V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40005 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 400A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 125ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40005R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 50V 400A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 125ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40010 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 3TOWER Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 100V Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 125ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40010R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 3TOWER Reverse Recovery Time (trr): 125ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 100V Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40020 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 400A 3TOWER Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 125ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 200V Supplier Device Package: Three Tower Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40020R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 400A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 125ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40060 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 400A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 240ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Part Status: Active Packaging: Bulk Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURT40060R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 600V 400A 3TOWER Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240ns Current - Reverse Leakage @ Vr: 25µA @ 50V Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT40035 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 35V 400A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT40035R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 35V 400A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky, Reverse Polarity Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBRT40045 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 45V 400A 3TOWER Part Status: Active Packaging: Bulk Manufacturer: GeneSiC Semiconductor Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 44 Stücke Lieferzeit 21-28 Tag (e) |
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MURTA50020 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 500A 3TOWER Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURTA50020R |
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GeneSiC Semiconductor |
Description: DIODE MODULE 200V 500A 3TOWER Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MURTA50040 |
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GeneSiC Semiconductor |
Description: DIODE MODULE 400V 500A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 250A Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| MBRT30080R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
| MUR40005CT |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 400A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
| MUR40005CTR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 400A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
| MUR40010CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
| MUR40010CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MUR40020CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
| MUR40020CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
| MUR40040CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
| MUR40040CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
| MUR40060CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 400A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
| MUR40060CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 2TOWER
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 400A 2TOWER
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
| MBRF40035 |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
| MBRF40035R |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
| MUR20005CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 2TOWER
Mounting Type: Chassis Mount
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 200A 2TOWER
Mounting Type: Chassis Mount
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 16000 Stücke - Preis und Lieferfrist anzeigen
| MUR20005CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
| MUR20020CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 4286 Stücke - Preis und Lieferfrist anzeigen
| MUR20020CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 200A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
| MUR20040CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
auf Bestellung 8327 Stücke - Preis und Lieferfrist anzeigen
| MUR20040CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
| MUR20060CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
| MUR20060CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
| MURT20005 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT20005R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 200A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
| MURT20010 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT20010R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
| MURT20020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A 3TOWER
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Packaging: Bulk
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 200A 3TOWER
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Packaging: Bulk
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
| MURT20020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
| MURT20040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT20040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
| MURT20060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
| MURT20060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
| MURF20005 |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A TO244
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 200A TO244
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
| MURF20005R |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A TO244
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 200A TO244
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Package / Case: TO-244AB
Packaging: Bulk
| MURF20010 |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A TO244
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 200A TO244
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
| MURF20010R |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
| MURF20020 |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
| MURF20020R |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A TO244
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 200A TO244
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
| MURF20040 |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
| MURF20040R |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
| MURF20060 |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A TO244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 200A TO244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
| MURF20060R |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
| MBR500100CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
| MBR500100CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MBR50020CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 2TOWER
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 20V 500A 2TOWER
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
| MBR50020CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 20V 500A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
| MBR50030CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
| MBR50030CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
| MBR50035CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
| MBR50035CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 2TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Supplier Device Package: Twin Tower
Diode Type: Schottky
Package / Case: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 500A 2TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Supplier Device Package: Twin Tower
Diode Type: Schottky
Package / Case: Twin Tower
| MBR50040CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
| MBR50040CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
| MBR50045CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 2TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
auf Bestellung 15 Stücke Description: DIODE MODULE 45V 500A 2TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Lieferzeit 21-28 Tag (e)
| MBR50045CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
| MBR50060CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
| MBR50060CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 500A 2TOWER
Part Status: Obsolete
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 500A 2TOWER
Part Status: Obsolete
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
| MBR50080CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Packaging: Bulk
| MBR50080CTR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
| MURT30005 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT30005R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
| MURT30010 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
| MURT30010R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
| MURT30020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Supplier Device Package: Three Tower
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 300A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Supplier Device Package: Three Tower
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT30020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
| MURT30040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
| MURT30040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MURT30060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT30060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
| MBRT40040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
| MBRT40040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 400A 3TOWER
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 400A 3TOWER
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
| MUR30020CT |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
| MBRT500100 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 500A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
| MBRT500100R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
| MBRT50020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Manufacturer: GeneSiC Semiconductor
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 20V 500A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Manufacturer: GeneSiC Semiconductor
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Supplier Device Package: Three Tower
| MBRT50020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 20V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
| MBRT50030 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MBRT50030R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
| MBRT50035 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MBRT50035R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 3TOWER
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 500A 3TOWER
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
| MBRT50040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 3TOWER
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 500A 3TOWER
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
| MBRT50040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 3TOWER
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 500A 3TOWER
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Three Tower
| MBRT50045 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MBRT50045R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 500A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Supplier Device Package: Three Tower
| MBRT50060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 60V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
| MBRT50060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 500A 3TOWER
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 60V 500A 3TOWER
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
| MBRT50080 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 80V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
| MBRT50080R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 80V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MURT40005 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT40005R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
| MURT40010 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 400A 3TOWER
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT40010R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 400A 3TOWER
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Diode Type: Standard
| MURT40020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Supplier Device Package: Three Tower
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 400A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Supplier Device Package: Three Tower
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT40020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
| MURT40060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 240ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Part Status: Active
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 240ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Part Status: Active
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURT40060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
| MBRT40035 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
| MBRT40035R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
| MBRT40045 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
auf Bestellung 44 Stücke Description: DIODE MODULE 45V 400A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Lieferzeit 21-28 Tag (e)
| MURTA50020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
| MURTA50020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 500A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 200V 500A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
| MURTA50040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode