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MBRT30080R MBRT30080R mbrt30045_thru_mbrt300100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40005CT mur40005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 400A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR40005CTR mur40005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 400A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR40010CT mur40005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR40010CTR mur40005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR40020CT mur40005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40020CTR mur40005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR40040CT mur40040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40040CTR mur40040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR40060CT mur40040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 400A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR40060CTR mur40040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 400A 2TOWER
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRF40035 MBRF40035 GeneSiC Semiconductor Description: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRF40035R MBRF40035R GeneSiC Semiconductor Description: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20005CT mur20005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 200A 2TOWER
Mounting Type: Chassis Mount
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20005CTR mur20005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20020CT mur20005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20020CTR mur20005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 200A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20040CT mur20040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20040CTR mur20040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20060CT mur20040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20060CTR mur20040ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20005 MURT20005 murt20005_thru_murt20020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20005R MURT20005R murt20005_thru_murt20020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 200A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20010 MURT20010 murt20005_thru_murt20020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20010R MURT20010R murt20005_thru_murt20020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20020 MURT20020 murt20005.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 200A 3TOWER
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Packaging: Bulk
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20020R MURT20020R murt20005.pdf GeneSiC Semiconductor Description: DIODE MODULE 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20040 MURT20040 murt20040_thru_murt20060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20040R MURT20040R murt20040_thru_murt20060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20060 MURT20060 murt20040.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20060R MURT20060R murt20040.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
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MURF20005 GeneSiC Semiconductor Description: DIODE MODULE 50V 200A TO244
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURF20005R GeneSiC Semiconductor Description: DIODE MODULE 50V 200A TO244
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF20010 GeneSiC Semiconductor Description: DIODE MODULE 100V 200A TO244
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
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MURF20010R GeneSiC Semiconductor Description: DIODE MODULE 100V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF20020 GeneSiC Semiconductor Description: DIODE MODULE 200V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF20020R GeneSiC Semiconductor Description: DIODE MODULE 200V 200A TO244
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
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MURF20040 MURF20040 GeneSiC Semiconductor Description: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF20040R MURF20040R GeneSiC Semiconductor Description: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF20060 MURF20060 GeneSiC Semiconductor Description: DIODE MODULE 600V 200A TO244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF20060R MURF20060R GeneSiC Semiconductor Description: DIODE MODULE 600V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR500100CT MBR500100CT mbr50045ct_thru_mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR500100CTR MBR500100CTR mbr50045ct_thru_mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50020CT MBR50020CT mbr50020ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 500A 2TOWER
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50020CTR MBR50020CTR mbr50020ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 500A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50030CT MBR50030CT mbr50020ct_thru_mbr50040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50030CTR MBR50030CTR mbr50020ct_thru_mbr50040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
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MBR50035CT MBR50035CT mbr50020ct_thru_mbr50040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
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MBR50035CTR MBR50035CTR mbr50020ct_thru_mbr50040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 500A 2TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Supplier Device Package: Twin Tower
Diode Type: Schottky
Package / Case: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50040CT MBR50040CT mbr50020ct_thru_mbr50040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
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MBR50040CTR MBR50040CTR mbr50020ct_thru_mbr50040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50045CT MBR50045CT mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 500A 2TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50045CTR MBR50045CTR mbr50045ct_thru_mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50060CT MBR50060CT mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50060CTR MBR50060CTR mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 500A 2TOWER
Part Status: Obsolete
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50080CT MBR50080CT mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR50080CTR MBR50080CTR mbr500100ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURT30005 MURT30005 murt30005_thru_murt30020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURT30005R MURT30005R murt30005_thru_murt30020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURT30010 MURT30010 murt30005.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
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MURT30010R MURT30010R murt30005_thru_murt30020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
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MURT30020 MURT30020 murt30005_thru_murt30020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 300A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Supplier Device Package: Three Tower
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURT30020R MURT30020R murt30005_thru_murt30020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
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MURT30040 MURT30040 murt30040_thru_murt30060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30040R MURT30040R murt30040_thru_murt30060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30060 MURT30060 murt30040_thru_murt30060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30060R MURT30060R murt30040_thru_murt30060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040 MBRT40040 mbrt40020.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040R MBRT40040R mbrt40020.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 400A 3TOWER
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30020CT mur30005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500100 MBRT500100 mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 500A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500100R MBRT500100R mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50020 MBRT50020 mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 500A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Manufacturer: GeneSiC Semiconductor
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50020R MBRT50020R mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50030 MBRT50030 mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50030R MBRT50030R mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50035 MBRT50035 mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50035R MBRT50035R mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 500A 3TOWER
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50040 MBRT50040 mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 500A 3TOWER
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50040R MBRT50040R mbrt50020.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 500A 3TOWER
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50045 MBRT50045 mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50045R MBRT50045R mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 500A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50060 MBRT50060 mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50060R MBRT50060R mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 500A 3TOWER
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50080 MBRT50080 mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50080R MBRT50080R mbrt500100r.pdf GeneSiC Semiconductor Description: DIODE MODULE 80V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40005 MURT40005 murt40005_thru_murt40020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40005R MURT40005R murt40005_thru_murt40020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40010 MURT40010 murt40005_thru_murt40020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 400A 3TOWER
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40010R MURT40010R murt40005_thru_murt40020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 400A 3TOWER
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40020 MURT40020 murt40005_thru_murt40020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 400A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Supplier Device Package: Three Tower
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40020R MURT40020R murt40005_thru_murt40020r.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40060 MURT40060 murt40040.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 240ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Part Status: Active
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40060R MURT40060R murt40040.pdf GeneSiC Semiconductor Description: DIODE MODULE 600V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035 MBRT40035 mbrt40020_thru_mbrt40040r.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035R MBRT40035R mbrt40020_thru_mbrt40040r.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40045 MBRT40045 mbrt400100.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 400A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 44 Stücke
Lieferzeit 21-28 Tag (e)
MURTA50020 MURTA50020 murta50020_thru_murta50060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA50020R MURTA50020R murta50020_thru_murta50060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 200V 500A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA50040 MURTA50040 murta50020_thru_murta50060r.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30080R mbrt30045_thru_mbrt300100r.pdf
MBRT30080R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40005CT mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40005CTR mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40010CT mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40010CTR mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40020CT mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40020CTR mur40005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40040CT mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40040CTR mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 2TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40060CT mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR40060CTR mur40040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 2TOWER
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF40035
MBRF40035
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF40035R
MBRF40035R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20005CT mur20005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 2TOWER
Mounting Type: Chassis Mount
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16000 Stücke - Preis und Lieferfrist anzeigen
MUR20005CTR mur20005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 2TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20020CT mur20005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4286 Stücke - Preis und Lieferfrist anzeigen
MUR20020CTR mur20005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
MUR20040CT mur20040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8327 Stücke - Preis und Lieferfrist anzeigen
MUR20040CTR mur20040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20060CT mur20040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 2TOWER
Packaging: Bulk
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
MUR20060CTR mur20040ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20005 murt20005_thru_murt20020r.pdf
MURT20005
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20005R murt20005_thru_murt20020r.pdf
MURT20005R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20010 murt20005_thru_murt20020r.pdf
MURT20010
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20010R murt20005_thru_murt20020r.pdf
MURT20010R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20020 murt20005.pdf
MURT20020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A 3TOWER
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Packaging: Bulk
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20020R murt20005.pdf
MURT20020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20040 murt20040_thru_murt20060r.pdf
MURT20040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20040R murt20040_thru_murt20060r.pdf
MURT20040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20060 murt20040.pdf
MURT20060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT20060R murt20040.pdf
MURT20060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20005
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A TO244
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20005R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A TO244
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20010
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A TO244
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20010R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 200A TO244
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20040
MURF20040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20040R
MURF20040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20060
MURF20060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A TO244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF20060R
MURF20060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A TO244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR500100CT mbr50045ct_thru_mbr500100ctr.pdf
MBR500100CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR500100CTR mbr50045ct_thru_mbr500100ctr.pdf
MBR500100CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50020CT mbr50020ctr.pdf
MBR50020CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 2TOWER
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50020CTR mbr50020ctr.pdf
MBR50020CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50030CT mbr50020ct_thru_mbr50040ctr.pdf
MBR50030CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50030CTR mbr50020ct_thru_mbr50040ctr.pdf
MBR50030CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50035CT mbr50020ct_thru_mbr50040ctr.pdf
MBR50035CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50035CTR mbr50020ct_thru_mbr50040ctr.pdf
MBR50035CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 2TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Supplier Device Package: Twin Tower
Diode Type: Schottky
Package / Case: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50040CT mbr50020ct_thru_mbr50040ctr.pdf
MBR50040CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50040CTR mbr50020ct_thru_mbr50040ctr.pdf
MBR50040CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50045CT mbr500100ctr.pdf
MBR50045CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 2TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
auf Bestellung 15 Stücke
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MBR50045CTR mbr50045ct_thru_mbr500100ctr.pdf
MBR50045CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50060CT mbr500100ctr.pdf
MBR50060CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50060CTR mbr500100ctr.pdf
MBR50060CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 500A 2TOWER
Part Status: Obsolete
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50080CT mbr500100ctr.pdf
MBR50080CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR50080CTR mbr500100ctr.pdf
MBR50080CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30005 murt30005_thru_murt30020r.pdf
MURT30005
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30005R murt30005_thru_murt30020r.pdf
MURT30005R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30010 murt30005.pdf
MURT30010
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30010R murt30005_thru_murt30020r.pdf
MURT30010R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30020 murt30005_thru_murt30020r.pdf
MURT30020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Supplier Device Package: Three Tower
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30020R murt30005_thru_murt30020r.pdf
MURT30020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30040 murt30040_thru_murt30060r.pdf
MURT30040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30040R murt30040_thru_murt30060r.pdf
MURT30040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30060 murt30040_thru_murt30060r.pdf
MURT30060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT30060R murt30040_thru_murt30060r.pdf
MURT30060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040 mbrt40020.pdf
MBRT40040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040R mbrt40020.pdf
MBRT40040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 400A 3TOWER
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR30020CT mur30005ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500100 mbrt500100r.pdf
MBRT500100
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500100R mbrt500100r.pdf
MBRT500100R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50020 mbrt50020.pdf
MBRT50020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Manufacturer: GeneSiC Semiconductor
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50020R mbrt50020.pdf
MBRT50020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50030 mbrt50020.pdf
MBRT50030
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50030R mbrt50020.pdf
MBRT50030R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50035 mbrt50020.pdf
MBRT50035
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50035R mbrt50020.pdf
MBRT50035R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 500A 3TOWER
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50040 mbrt50020.pdf
MBRT50040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 3TOWER
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50040R mbrt50020.pdf
MBRT50040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 500A 3TOWER
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50045 mbrt500100r.pdf
MBRT50045
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50045R mbrt500100r.pdf
MBRT50045R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 500A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50060 mbrt500100r.pdf
MBRT50060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 500A 3TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50060R mbrt500100r.pdf
MBRT50060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 500A 3TOWER
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50080 mbrt500100r.pdf
MBRT50080
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT50080R mbrt500100r.pdf
MBRT50080R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 80V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40005 murt40005_thru_murt40020r.pdf
MURT40005
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40005R murt40005_thru_murt40020r.pdf
MURT40005R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40010 murt40005_thru_murt40020r.pdf
MURT40010
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40010R murt40005_thru_murt40020r.pdf
MURT40010R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40020 murt40005_thru_murt40020r.pdf
MURT40020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Supplier Device Package: Three Tower
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40020R murt40005_thru_murt40020r.pdf
MURT40020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 125ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40060 murt40040.pdf
MURT40060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 240ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Part Status: Active
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40060R murt40040.pdf
MURT40060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035 mbrt40020_thru_mbrt40040r.pdf
MBRT40035
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035R mbrt40020_thru_mbrt40040r.pdf
MBRT40035R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40045 mbrt400100.pdf
MBRT40045
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
auf Bestellung 44 Stücke
Lieferzeit 21-28 Tag (e)
MURTA50020 murta50020_thru_murta50060r.pdf
MURTA50020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 500A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA50020R murta50020_thru_murta50060r.pdf
MURTA50020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 500A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA50040 murta50020_thru_murta50060r.pdf
MURTA50040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 500A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 250A
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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