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MBRT40035R MBRT40035R GeneSiC Semiconductor mbrt40020_thru_mbrt40040r.pdf Description: DIODE MODULE 35V 400A 3TOWER
Produkt ist nicht verfügbar
MBR12020CTR MBR12020CTR GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar
MBR40040CT MBR40040CT GeneSiC Semiconductor mbr40020ct_thru_mbr40040ctr.pdf Description: DIODE MODULE 40V 400A 2TOWER
Produkt ist nicht verfügbar
MURT40040 MURT40040 GeneSiC Semiconductor murt40040.pdf Description: DIODE MODULE 400V 400A 3TOWER
Produkt ist nicht verfügbar
MBRT40045 MBRT40045 GeneSiC Semiconductor mbrt400100.pdf Description: DIODE MOD SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 81 Stücke:
Lieferzeit 21-28 Tag (e)
1+292.06 EUR
10+ 258.32 EUR
25+ 245.99 EUR
50+ 237.06 EUR
1N1190A 1N1190A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE GEN PURP 600V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 238 Stücke:
Lieferzeit 21-28 Tag (e)
2+24.54 EUR
10+ 20.53 EUR
25+ 19.13 EUR
100+ 17.18 EUR
Mindestbestellmenge: 2
MURT40040R MURT40040R GeneSiC Semiconductor murt40040.pdf Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 79 Stücke:
Lieferzeit 21-28 Tag (e)
1+323.1 EUR
10+ 287.14 EUR
25+ 273.98 EUR
50+ 264.42 EUR
MBR12030CT MBR12030CT GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 30V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar
MBR40040CTR MBR40040CTR GeneSiC Semiconductor mbr40020ct.pdf Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
auf Bestellung 17 Stücke:
Lieferzeit 21-28 Tag (e)
1+244.89 EUR
1N1190AR 1N1190AR GeneSiC Semiconductor 1n1183a.pdf Description: DIODE GEN PURP REV 600V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 36 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.45 EUR
10+ 21.29 EUR
25+ 19.83 EUR
Mindestbestellmenge: 2
MBRT40045R MBRT40045R GeneSiC Semiconductor mbrt400100.pdf Description: DIODE MODULE 45V 400A 3TOWER
Produkt ist nicht verfügbar
MBR12030CTR MBR12030CTR GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 30V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Produkt ist nicht verfügbar
MBR60040CT MBR60040CT GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MODULE 40V 300A 2TOWER
Produkt ist nicht verfügbar
MUR20010CT MUR20010CT GeneSiC Semiconductor mur20005ct.pdf Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
1N1190R 1N1190R GeneSiC Semiconductor 1n1188.pdf Description: DIODE GEN PURP REV 600V 35A DO5
Produkt ist nicht verfügbar
1N3673AR 1N3673AR GeneSiC Semiconductor 1n3671a.pdf Description: DIODE GEN PURP REV 1KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
MBR12035CT MBR12035CT GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Produkt ist nicht verfügbar
MBR60040CTR MBR60040CTR GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MOD SCHOTT 40V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
1+313.98 EUR
MUR20010CTR MUR20010CTR GeneSiC Semiconductor mur20005ct.pdf Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
1N3768 1N3768 GeneSiC Semiconductor 1n3765.pdf Description: DIODE GEN PURP 1KV 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
MBRH20045 MBRH20045 GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY 45V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
auf Bestellung 102 Stücke:
Lieferzeit 21-28 Tag (e)
1+178.59 EUR
10+ 154.06 EUR
25+ 145.26 EUR
50+ 138.94 EUR
1N3768R 1N3768R GeneSiC Semiconductor 1n3765.pdf Description: DIODE GEN PURP REV 1KV 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 113 Stücke:
Lieferzeit 21-28 Tag (e)
2+24.08 EUR
10+ 20.11 EUR
25+ 18.72 EUR
100+ 16.81 EUR
Mindestbestellmenge: 2
MUR2510R MUR2510R GeneSiC Semiconductor mur2505.pdf Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
1N3879 1N3879 GeneSiC Semiconductor 1n3879.pdf Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 739 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.11 EUR
10+ 13.93 EUR
25+ 12.83 EUR
100+ 11.34 EUR
250+ 10.44 EUR
500+ 9.81 EUR
Mindestbestellmenge: 2
MBRH20045R MBRH20045R GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY REV 45V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
1+182.62 EUR
1N3879R 1N3879R GeneSiC Semiconductor 1n3879.pdf Description: DIODE GEN PURP REV 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 855 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.73 EUR
10+ 14.48 EUR
25+ 13.36 EUR
100+ 11.82 EUR
250+ 10.9 EUR
500+ 10.26 EUR
Mindestbestellmenge: 2
1N1200A 1N1200A GeneSiC Semiconductor 1n1199a.pdf Description: DIODE GEN PURP 100V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1102 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.05 EUR
10+ 12.13 EUR
25+ 11.13 EUR
100+ 9.77 EUR
250+ 8.96 EUR
500+ 8.4 EUR
Mindestbestellmenge: 2
MBRT200100 MBRT200100 GeneSiC Semiconductor mbrt200100.pdf Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 66 Stücke:
Lieferzeit 21-28 Tag (e)
1+244.89 EUR
10+ 214.79 EUR
25+ 203.87 EUR
50+ 195.98 EUR
1N3881 1N3881 GeneSiC Semiconductor 1n3879.pdf Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 520 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.95 EUR
10+ 13.79 EUR
25+ 12.7 EUR
100+ 11.22 EUR
250+ 10.34 EUR
500+ 9.71 EUR
Mindestbestellmenge: 2
1N1200AR 1N1200AR GeneSiC Semiconductor mbr3560.pdf Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
1N3881R 1N3881R GeneSiC Semiconductor 1n3879.pdf Description: DIODE GEN PURP REV 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 555 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.55 EUR
10+ 14.34 EUR
25+ 13.22 EUR
100+ 11.7 EUR
250+ 10.79 EUR
500+ 10.15 EUR
Mindestbestellmenge: 2
1N3883 1N3883 GeneSiC Semiconductor 1n3879.pdf Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 41 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.95 EUR
10+ 13.79 EUR
25+ 12.7 EUR
Mindestbestellmenge: 2
1N1204A 1N1204A GeneSiC Semiconductor 1n1199a.pdf Description: DIODE GEN PURP 400V 12A DO4
Produkt ist nicht verfügbar
1N3883R 1N3883R GeneSiC Semiconductor 1n3879.pdf Description: DIODE GEN PURP REV 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 153 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.55 EUR
10+ 14.34 EUR
25+ 13.22 EUR
100+ 11.7 EUR
Mindestbestellmenge: 2
1N1204AR 1N1204AR GeneSiC Semiconductor 1n1199a.pdf Description: DIODE GEN PURP REV 400V 12A DO4
Produkt ist nicht verfügbar
MUR5010R MUR5010R GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP REV 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 183 Stücke:
Lieferzeit 21-28 Tag (e)
1+55.61 EUR
1N8024-GA 1N8024-GA GeneSiC Semiconductor 1N8024-GA.pdf Description: DIODE SCHOTTKY 1.2KV 750MA TO257
Produkt ist nicht verfügbar
1N8026-GA 1N8026-GA GeneSiC Semiconductor 1N8026-GA.pdf Description: DIODE SILICON 1.2KV 8A TO257
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
1N8028-GA 1N8028-GA GeneSiC Semiconductor 1N8028-GA.pdf Description: DIODE SCHOTTKY 1.2KV 9.4A TO257
Produkt ist nicht verfügbar
1N8030-GA 1N8030-GA GeneSiC Semiconductor 1N8030-GA.pdf Description: DIODE SCHOTTKY 650V 750MA TO257
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
1N8031-GA 1N8031-GA GeneSiC Semiconductor 1N8031-GA.pdf Description: DIODE SCHOTTKY 650V 1A TO276
Produkt ist nicht verfügbar
1N8032-GA 1N8032-GA GeneSiC Semiconductor 1N8032-GA.pdf Description: DIODE SCHOTTKY 650V 2.5A TO257
Produkt ist nicht verfügbar
1N8033-GA 1N8033-GA GeneSiC Semiconductor 1N8033-GA.pdf Description: DIODE SCHOTTKY 650V 4.3A TO276
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
1N8034-GA 1N8034-GA GeneSiC Semiconductor 1N8034-GA.pdf Description: DIODE SCHOTTKY 650V 9.4A TO257
Produkt ist nicht verfügbar
1N8035-GA 1N8035-GA GeneSiC Semiconductor 1N8035-GA.pdf Description: DIODE SCHOTTKY 650V 14.6A TO276
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
GB01SLT12-220 GB01SLT12-220 GeneSiC Semiconductor Description: DIODE SIL CARB 1.2KV 1A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
GB01SLT12-252 GB01SLT12-252 GeneSiC Semiconductor GB01SLT12-252.pdf Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
GB05SLT12-220 GB05SLT12-220 GeneSiC Semiconductor Description: DIODE SIL CARB 1.2KV 5A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
GB05SLT12-252 GB05SLT12-252 GeneSiC Semiconductor GB05SLT12-252.pdf Description: DIODE SILICON 1.2KV 5A TO252
Produkt ist nicht verfügbar
GB20SLT12-247 GB20SLT12-247 GeneSiC Semiconductor GB20SLT12-247.pdf Description: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 968pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
MBR200100CTS MBR200100CTS GeneSiC Semiconductor MBR200100CTS.pdf Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
MBR40045CTS MBR40045CTS GeneSiC Semiconductor mbr40045cts.pdf Description: DIODE MOD SCHOTT 45V 400A SOT227
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Produkt ist nicht verfügbar
GA04JT17-247 GA04JT17-247 GeneSiC Semiconductor GA04JT17-247.pdf Description: TRANS SJT 1700V 4A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
Produkt ist nicht verfügbar
GA08JT17-247 GA08JT17-247 GeneSiC Semiconductor GA08JT17-247.pdf Description: TRANS SJT 1700V 8A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
Power Dissipation (Max): 48W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
Produkt ist nicht verfügbar
GA16JT17-247 GA16JT17-247 GeneSiC Semiconductor GA16JT17-247_SPICE.pdf Description: TRANS SJT 1700V 16A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
Produkt ist nicht verfügbar
GB02SLT12-220 GB02SLT12-220 GeneSiC Semiconductor Description: DIODE SIL CARB 1.2KV 2A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 138pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
GB02SLT12-252 GB02SLT12-252 GeneSiC Semiconductor GB02SLT12-252.pdf Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
GB10SLT12-220 GB10SLT12-220 GeneSiC Semiconductor Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Produkt ist nicht verfügbar
GB10SLT12-252 GB10SLT12-252 GeneSiC Semiconductor GB10SLT12-252.pdf Description: DIODE SCHOTTKY 1.2KV 10A TO252
Produkt ist nicht verfügbar
GA35XCP12-247 GA35XCP12-247 GeneSiC Semiconductor GA35XCP12-247.pdf Description: IGBT 1200V SOT247
Produkt ist nicht verfügbar
MBRT40035R mbrt40020_thru_mbrt40040r.pdf
MBRT40035R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 3TOWER
Produkt ist nicht verfügbar
MBR12020CTR mbr12020ct.pdf
MBR12020CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar
MBR40040CT mbr40020ct_thru_mbr40040ctr.pdf
MBR40040CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 400A 2TOWER
Produkt ist nicht verfügbar
MURT40040 murt40040.pdf
MURT40040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 3TOWER
Produkt ist nicht verfügbar
MBRT40045 mbrt400100.pdf
MBRT40045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 81 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+292.06 EUR
10+ 258.32 EUR
25+ 245.99 EUR
50+ 237.06 EUR
1N1190A 1n1183a.pdf
1N1190A
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 238 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+24.54 EUR
10+ 20.53 EUR
25+ 19.13 EUR
100+ 17.18 EUR
Mindestbestellmenge: 2
MURT40040R murt40040.pdf
MURT40040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 79 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+323.1 EUR
10+ 287.14 EUR
25+ 273.98 EUR
50+ 264.42 EUR
MBR12030CT mbr12020ct.pdf
MBR12030CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar
MBR40040CTR mbr40020ct.pdf
MBR40040CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
auf Bestellung 17 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+244.89 EUR
1N1190AR 1n1183a.pdf
1N1190AR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 36 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.45 EUR
10+ 21.29 EUR
25+ 19.83 EUR
Mindestbestellmenge: 2
MBRT40045R mbrt400100.pdf
MBRT40045R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 3TOWER
Produkt ist nicht verfügbar
MBR12030CTR mbr12020ct.pdf
MBR12030CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Produkt ist nicht verfügbar
MBR60040CT mbr60020ctr.pdf
MBR60040CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Produkt ist nicht verfügbar
MUR20010CT mur20005ct.pdf
MUR20010CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
1N1190R 1n1188.pdf
1N1190R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 35A DO5
Produkt ist nicht verfügbar
1N3673AR 1n3671a.pdf
1N3673AR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
MBR12035CT mbr12020ct.pdf
MBR12035CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Produkt ist nicht verfügbar
MBR60040CTR mbr60020ctr.pdf
MBR60040CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+313.98 EUR
MUR20010CTR mur20005ct.pdf
MUR20010CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
1N3768 1n3765.pdf
1N3768
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
MBRH20045 mbrh120100r.pdf
MBRH20045
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
auf Bestellung 102 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+178.59 EUR
10+ 154.06 EUR
25+ 145.26 EUR
50+ 138.94 EUR
1N3768R 1n3765.pdf
1N3768R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 113 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+24.08 EUR
10+ 20.11 EUR
25+ 18.72 EUR
100+ 16.81 EUR
Mindestbestellmenge: 2
MUR2510R mur2505.pdf
MUR2510R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
1N3879 1n3879.pdf
1N3879
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 739 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+17.11 EUR
10+ 13.93 EUR
25+ 12.83 EUR
100+ 11.34 EUR
250+ 10.44 EUR
500+ 9.81 EUR
Mindestbestellmenge: 2
MBRH20045R mbrh120100r.pdf
MBRH20045R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+182.62 EUR
1N3879R 1n3879.pdf
1N3879R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 855 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+17.73 EUR
10+ 14.48 EUR
25+ 13.36 EUR
100+ 11.82 EUR
250+ 10.9 EUR
500+ 10.26 EUR
Mindestbestellmenge: 2
1N1200A 1n1199a.pdf
1N1200A
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1102 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.05 EUR
10+ 12.13 EUR
25+ 11.13 EUR
100+ 9.77 EUR
250+ 8.96 EUR
500+ 8.4 EUR
Mindestbestellmenge: 2
MBRT200100 mbrt200100.pdf
MBRT200100
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 66 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+244.89 EUR
10+ 214.79 EUR
25+ 203.87 EUR
50+ 195.98 EUR
1N3881 1n3879.pdf
1N3881
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 520 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.95 EUR
10+ 13.79 EUR
25+ 12.7 EUR
100+ 11.22 EUR
250+ 10.34 EUR
500+ 9.71 EUR
Mindestbestellmenge: 2
1N1200AR mbr3560.pdf
1N1200AR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
1N3881R 1n3879.pdf
1N3881R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 555 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+17.55 EUR
10+ 14.34 EUR
25+ 13.22 EUR
100+ 11.7 EUR
250+ 10.79 EUR
500+ 10.15 EUR
Mindestbestellmenge: 2
1N3883 1n3879.pdf
1N3883
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 41 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.95 EUR
10+ 13.79 EUR
25+ 12.7 EUR
Mindestbestellmenge: 2
1N1204A 1n1199a.pdf
1N1204A
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Produkt ist nicht verfügbar
1N3883R 1n3879.pdf
1N3883R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 153 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+17.55 EUR
10+ 14.34 EUR
25+ 13.22 EUR
100+ 11.7 EUR
Mindestbestellmenge: 2
1N1204AR 1n1199a.pdf
1N1204AR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Produkt ist nicht verfügbar
MUR5010R mur5005.pdf
MUR5010R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 183 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+55.61 EUR
1N8024-GA 1N8024-GA.pdf
1N8024-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 750MA TO257
Produkt ist nicht verfügbar
1N8026-GA 1N8026-GA.pdf
1N8026-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SILICON 1.2KV 8A TO257
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
1N8028-GA 1N8028-GA.pdf
1N8028-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 9.4A TO257
Produkt ist nicht verfügbar
1N8030-GA 1N8030-GA.pdf
1N8030-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 750MA TO257
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
1N8031-GA 1N8031-GA.pdf
1N8031-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 1A TO276
Produkt ist nicht verfügbar
1N8032-GA 1N8032-GA.pdf
1N8032-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 2.5A TO257
Produkt ist nicht verfügbar
1N8033-GA 1N8033-GA.pdf
1N8033-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 4.3A TO276
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
1N8034-GA 1N8034-GA.pdf
1N8034-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 9.4A TO257
Produkt ist nicht verfügbar
1N8035-GA 1N8035-GA.pdf
1N8035-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 14.6A TO276
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
GB01SLT12-220
GB01SLT12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 1A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
GB01SLT12-252 GB01SLT12-252.pdf
GB01SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
GB05SLT12-220
GB05SLT12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 5A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
GB05SLT12-252 GB05SLT12-252.pdf
GB05SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SILICON 1.2KV 5A TO252
Produkt ist nicht verfügbar
GB20SLT12-247 GB20SLT12-247.pdf
GB20SLT12-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 968pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
MBR200100CTS MBR200100CTS.pdf
MBR200100CTS
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
MBR40045CTS mbr40045cts.pdf
MBR40045CTS
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 400A SOT227
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Produkt ist nicht verfügbar
GA04JT17-247 GA04JT17-247.pdf
GA04JT17-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 4A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
Produkt ist nicht verfügbar
GA08JT17-247 GA08JT17-247.pdf
GA08JT17-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 8A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
Power Dissipation (Max): 48W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
Produkt ist nicht verfügbar
GA16JT17-247 GA16JT17-247_SPICE.pdf
GA16JT17-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 16A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
Produkt ist nicht verfügbar
GB02SLT12-220
GB02SLT12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 2A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 138pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
GB02SLT12-252 GB02SLT12-252.pdf
GB02SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
GB10SLT12-220
GB10SLT12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Produkt ist nicht verfügbar
GB10SLT12-252 GB10SLT12-252.pdf
GB10SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 10A TO252
Produkt ist nicht verfügbar
GA35XCP12-247 GA35XCP12-247.pdf
GA35XCP12-247
Hersteller: GeneSiC Semiconductor
Description: IGBT 1200V SOT247
Produkt ist nicht verfügbar
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