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1N1184R 1N1184R 1n1183_thru_1n1187r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 100V 35A DO5
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GB05SLT12-220 GB05SLT12-220 GeneSiC Semiconductor Description: DIODE SCHOTTKY 1.2KV 5A TO220AC
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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GB05SLT12-252 GB05SLT12-252 GB05SLT12-252.pdf GeneSiC Semiconductor Description: DIODE SILICON 1.2KV 5A TO252
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 75 Stücke
Lieferzeit 21-28 Tag (e)
1N1190 1N1190 1n1188.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 35A DO5
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
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1N1188 1N1188 1n1188_thru_1n1190r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 35A DO5
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1N2138AR 1N2138AR 1n2133a.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 600V 60A DO5
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Base Part Number: 1N2138AR
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 182 Stücke
Lieferzeit 21-28 Tag (e)
1N2138A 1N2138A 1n2133a_thru_1n2138ar.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 60A DO5
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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S85J S85J s85b.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 85A DO5
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 100V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 174 Stücke
Lieferzeit 21-28 Tag (e)
1N1184 1N1184 1n1183.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 100V 35A DO5
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 50V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Base Part Number: 1N1184
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 34 Stücke
Lieferzeit 21-28 Tag (e)
1N3768 1N3768 1n3765_thru_1n3768r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 1KV 35A DO5
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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S85JR S85JR s85b.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: S85J
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 387 Stücke
Lieferzeit 21-28 Tag (e)
FR70G02 FR70G02 fr70b02_thru_fr70jr02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 70A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 55 Stücke
Lieferzeit 21-28 Tag (e)
FR70GR02 FR70GR02 fr70b02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 70A DO5
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
1+ 58.68 EUR
10+ 48.95 EUR
25+ 45.53 EUR
100+ 44.49 EUR
FR40GR02 FR40GR02 fr40b02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FR30GR02 FR30GR02 fr30a02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 30A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Diode Type: Standard, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 200 ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 246 Stücke
Lieferzeit 21-28 Tag (e)
1+ 38.17 EUR
MUR2510R MUR2510R mur2505.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1N3768R 1N3768R 1n3765.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 1KV 35A DO5
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Base Part Number: 1N3768R
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 190°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 167 Stücke
Lieferzeit 21-28 Tag (e)
FR30G02 FR30G02 fr30a02_thru_fr30jr02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 30A DO5
Supplier Device Package: DO-5
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 125°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
1+ 37.57 EUR
MUR2510 MUR2510 mur2505_thru_mur2520r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 100V 25A DO4
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
Current - Average Rectified (Io): 25A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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S85QR S85QR s85k_thru_s85qr.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 1.2KV 85A DO5
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S85Q S85Q s85k.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 1.2KV 85A DO5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-5
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 204 Stücke
Lieferzeit 21-28 Tag (e)
FR40G02 FR40G02 fr40b02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 40A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 40A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
1+ 45.21 EUR
10+ 38.19 EUR
25+ 35.71 EUR
100+ 32.88 EUR
FR85G02 FR85G02 fr85b02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 85A DO5
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 383 Stücke
Lieferzeit 21-28 Tag (e)
FR85GR02 FR85GR02 fr85b02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Standard, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GAP3SLT33-214 GAP3SLT33-214 GAP3SLT33-214.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 3.3KV 300MA DO214
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 3300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
Package / Case: DO-214AA, SMB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GeneSiC Semiconductor Description: DIODE SCHOTTKY 3.3KV 300MA DO214
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12 Stücke
Lieferzeit 21-28 Tag (e)
1+ 28.42 EUR
10+ 25.9 EUR
MUR5010R MUR5010R mur5005_thru_mur5020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 100V 50A DO5
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 297 Stücke
Lieferzeit 21-28 Tag (e)
MUR7020 MUR7020 mur7005_thru_mur7020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 70A DO5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 89 Stücke
Lieferzeit 21-28 Tag (e)
GB10SLT12-252 GB10SLT12-252 GB10SLT12-252.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 1.2KV 10A TO252
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GB10SLT12-220 GB10SLT12-220 GeneSiC Semiconductor Description: DIODE SCHOTTKY 1200V 10A TO220AC
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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GB20SLT12-247 GB20SLT12-247 GB20SLT12-247.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 1.2KV 20A TO247AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-2
Mounting Type: Through Hole
Capacitance @ Vr, F: 968pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Not For New Designs
Packaging: Bulk
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auf Bestellung 29 Stücke
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GAP3SLT33-220FP GAP3SLT33-220FP GAP3SLT33-220FP.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 3.3KV 300MA TO220
Speed: No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 3300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 3300 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220FP
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
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auf Bestellung 16 Stücke
Lieferzeit 21-28 Tag (e)
S300YR S300YR s300y.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 1.6KV DO9
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -60°C ~ 180°C
Supplier Device Package: DO-9
Current - Average Rectified (Io): 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
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Lieferzeit 21-28 Tag (e)
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10+ 153.71 EUR
25+ 149.21 EUR
S300Y S300Y s300y.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 1.6KV 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
1+ 170.3 EUR
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GB50SLT12-247 GB50SLT12-247 GB50SLT12-247.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 1.2KV 50A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 2940pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
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1N2131A 1N2131A 1n2128a_thru_1n2131ar.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 60A DO5
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Current - Average Rectified (Io): 60A
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MUR5010 MUR5010 mur5005_thru_mur5020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 100V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
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1N6098 1N6098 1n6097.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 50A DO5
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Lieferzeit 21-28 Tag (e)
1+ 67.83 EUR
1N8031-GA 1N8031-GA 1N8031-GA.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 650V 1A TO276
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-276
Package / Case: TO-276AA
Mounting Type: Through Hole
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
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1N8030-GA 1N8030-GA 1N8030-GA.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 650V 750MA TO257
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.39V @ 750mA
Current - Average Rectified (Io): 750mA
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
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auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
1N8024-GA 1N8024-GA 1N8024-GA.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 1.2KV 750MA TO257
Packaging: Tube
Part Status: Obsolete
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 750mA
Voltage - Forward (Vf) (Max) @ If: 1.74V @ 750mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: 66pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C
Base Part Number: 1N8024
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1N8032-GA 1N8032-GA 1N8032-GA.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 650V 2.5A TO257
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 274pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 2.5A
Voltage - DC Reverse (Vr) (Max): 650V
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1N8035-GA 1N8035-GA 1N8035-GA.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 650V 14.6A TO276
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-276
Package / Case: TO-276AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 14.6A (DC)
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
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auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
1N8026-GA 1N8026-GA 1N8026-GA.pdf GeneSiC Semiconductor Description: DIODE SILICON 1.2KV 8A TO257
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2.5A
Current - Average Rectified (Io): 8A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C
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auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1N8034-GA 1N8034-GA 1N8034-GA.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 650V 9.4A TO257
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Current - Average Rectified (Io): 9.4A (DC)
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
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1N8028-GA 1N8028-GA 1N8028-GA.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 1.2KV 9.4A TO257
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 884pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
Current - Average Rectified (Io): 9.4A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
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GA03JT12-247 GA03JT12-247 GA03JT12-247.pdf GeneSiC Semiconductor Description: TRANS SJT 1200V 3A TO-247AB
Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C)
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 91W
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auf Bestellung 236 Stücke
Lieferzeit 21-28 Tag (e)
GA06JT12-247 GA06JT12-247 GA06JT12-247.pdf GeneSiC Semiconductor Description: TRANS SJT 1200V 6A TO-247AB
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 146W
Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
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GA04JT17-247 GA04JT17-247 GA04JT17-247.pdf GeneSiC Semiconductor Description: TRANS SJT 1700V 4A TO-247AB
Power - Max: 106W
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
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auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
GA08JT17-247 GA08JT17-247 GA08JT17-247.pdf GeneSiC Semiconductor Description: TRANS SJT 1700V 8A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247AB
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
Drain to Source Voltage (Vdss): 1700V
Technology: SiC (Silicon Carbide Junction Transistor)
Part Status: Active
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auf Bestellung 427 Stücke
Lieferzeit 21-28 Tag (e)
S12BR s12b_thru_s12jr.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 100V 12A DO4
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Current - Average Rectified (Io): 12A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
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S12GR s12b_thru_s12jr.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 12A DO4
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Current - Average Rectified (Io): 12A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
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FR85D02 fr85b02_thru_fr85jr02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
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FR85D05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 85A DO5
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
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FR85DR02 fr85b02_thru_fr85jr02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 200V 85A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
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FR85DR05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 200V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard, Reverse Polarity
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FR85B02 fr85b02_thru_fr85jr02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 100V 85A DO5
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
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FR85B05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 100V 85A DO5
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
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FR85BR02 fr85b02_thru_fr85jr02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 100V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
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FR85BR05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 100V 85A DO5
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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FR85G05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 85A DO5
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
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FR85GR05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FR85J02 fr85b02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 85A DO5
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FR85J05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 85A DO5
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FR85JR02 FR85JR02 fr85b02_thru_fr85jr02.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 600V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 97 Stücke
Lieferzeit 21-28 Tag (e)
FR85JR05 FR85JR05 fr85b05_thru_fr85jr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 600V 85A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 97 Stücke
Lieferzeit 21-28 Tag (e)
FR85K05 fr85k05_thru_fr85mr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 800V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FR85KR05 fr85k05_thru_fr85mr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 800V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FR85M05 fr85k05_thru_fr85mr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 1KV 85A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FR85MR05 fr85k05_thru_fr85mr05.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 1KV 85A DO5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5005 mur5005_thru_mur5020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 50V 50A DO5
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5005R mur5005_thru_mur5020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 50V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5020 mur5005.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 50A DO5
Current - Average Rectified (Io): 50A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5020R mur5005.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Standard, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5040 mur5040_thru_mur5060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5040R mur5040_thru_mur5060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5060 mur5040_thru_mur5060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR5060R mur5040_thru_mur5060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 600V 50A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 90ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7005 mur7005_thru_mur7020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 50V 70A DO5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7005R mur7005_thru_mur7020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 50V 70A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7010 mur7005_thru_mur7020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 100V 70A DO5
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7010R mur7005_thru_mur7020r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 100V 70A DO5
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7020R mur7005.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 200V 70A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7040 mur7040_thru_mur7060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 70A DO5
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7040R mur7040_thru_mur7060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 400V 70A DO5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7060 mur7040_thru_mur7060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 70A DO5
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MUR7060R mur7040_thru_mur7060r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP REV 600V 70A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR35100 mbr3560.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 100V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Mounting Type: Chassis, Stud Mount
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR35100R mbr3560.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY REV 100V DO4
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 35A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR3520 mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 35A DO4
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR3520R mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY REV 20V DO4
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR3530 mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 35A DO4
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR3530R mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY REV 30V DO4
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3535 mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 35A DO4
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3535R mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY REV 35V DO4
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3540 MBR3540 mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3540R mbr3520.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY REV 40V DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3545 mbr3560.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
1+ 47.11 EUR
MBR3545R mbr3560.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY REV 45V DO4
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3560 mbr3560.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 60V 35A DO4
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N1184R 1n1183_thru_1n1187r.pdf
1N1184R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 35A DO5
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB05SLT12-220
GB05SLT12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 5A TO220AC
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB05SLT12-252 GB05SLT12-252.pdf
GB05SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SILICON 1.2KV 5A TO252
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
auf Bestellung 75 Stücke
Lieferzeit 21-28 Tag (e)
1N1190 1n1188.pdf
1N1190
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 35A DO5
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N1188 1n1188_thru_1n1190r.pdf
1N1188
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 35A DO5
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
1N2138AR 1n2133a.pdf
1N2138AR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 60A DO5
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Base Part Number: 1N2138AR
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
auf Bestellung 182 Stücke
Lieferzeit 21-28 Tag (e)
1N2138A 1n2133a_thru_1n2138ar.pdf
1N2138A
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 60A DO5
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S85J s85b.pdf
S85J
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 85A DO5
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 100V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
auf Bestellung 174 Stücke
Lieferzeit 21-28 Tag (e)
1N1184 1n1183.pdf
1N1184
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 35A DO5
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 50V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Base Part Number: 1N1184
auf Bestellung 34 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
1N3768 1n3765_thru_1n3768r.pdf
1N3768
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 35A DO5
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S85JR s85b.pdf
S85JR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: S85J
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Part Status: Active
auf Bestellung 387 Stücke
Lieferzeit 21-28 Tag (e)
FR70G02 fr70b02_thru_fr70jr02.pdf
FR70G02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
auf Bestellung 55 Stücke
Lieferzeit 21-28 Tag (e)
FR70GR02 fr70b02.pdf
FR70GR02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 70A DO5
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
1+ 58.68 EUR
10+ 48.95 EUR
25+ 45.53 EUR
100+ 44.49 EUR
FR40GR02 fr40b02.pdf
FR40GR02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR30GR02 fr30a02.pdf
FR30GR02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 30A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Diode Type: Standard, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 200 ns
auf Bestellung 246 Stücke
Lieferzeit 21-28 Tag (e)
1+ 38.17 EUR
MUR2510R mur2505.pdf
MUR2510R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N3768R 1n3765.pdf
1N3768R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 35A DO5
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Base Part Number: 1N3768R
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 190°C
auf Bestellung 167 Stücke
Lieferzeit 21-28 Tag (e)
FR30G02 fr30a02_thru_fr30jr02.pdf
FR30G02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 30A DO5
Supplier Device Package: DO-5
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 125°C
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
1+ 37.57 EUR
MUR2510 mur2505_thru_mur2520r.pdf
MUR2510
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 25A DO4
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
Current - Average Rectified (Io): 25A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S85QR s85k_thru_s85qr.pdf
S85QR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.2KV 85A DO5
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S85Q s85k.pdf
S85Q
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 85A DO5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-5
auf Bestellung 204 Stücke
Lieferzeit 21-28 Tag (e)
FR40G02 fr40b02.pdf
FR40G02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 40A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 40A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
1+ 45.21 EUR
10+ 38.19 EUR
25+ 35.71 EUR
100+ 32.88 EUR
FR85G02 fr85b02.pdf
FR85G02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 85A DO5
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Manufacturer: GeneSiC Semiconductor
auf Bestellung 383 Stücke
Lieferzeit 21-28 Tag (e)
FR85GR02 fr85b02.pdf
FR85GR02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Standard, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GAP3SLT33-214 GAP3SLT33-214.pdf
GAP3SLT33-214
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 3.3KV 300MA DO214
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 3300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7731 Stücke - Preis und Lieferfrist anzeigen
GAP3SLT33-214 GAP3SLT33-214.pdf
GAP3SLT33-214
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 3.3KV 300MA DO214
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
auf Bestellung 12 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7719 Stücke - Preis und Lieferfrist anzeigen
1+ 28.42 EUR
10+ 25.9 EUR
MUR5010R mur5005_thru_mur5020r.pdf
MUR5010R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 50A DO5
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
auf Bestellung 297 Stücke
Lieferzeit 21-28 Tag (e)
MUR7020 mur7005_thru_mur7020r.pdf
MUR7020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A DO5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
auf Bestellung 89 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
GB10SLT12-252 GB10SLT12-252.pdf
GB10SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 10A TO252
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB10SLT12-220
GB10SLT12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1200V 10A TO220AC
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB20SLT12-247 GB20SLT12-247.pdf
GB20SLT12-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 20A TO247AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-2
Mounting Type: Through Hole
Capacitance @ Vr, F: 968pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Not For New Designs
Packaging: Bulk
auf Bestellung 29 Stücke
Lieferzeit 21-28 Tag (e)
GAP3SLT33-220FP GAP3SLT33-220FP.pdf
GAP3SLT33-220FP
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 3.3KV 300MA TO220
Speed: No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 3300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 3300 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220FP
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
auf Bestellung 16 Stücke
Lieferzeit 21-28 Tag (e)
S300YR s300y.pdf
S300YR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.6KV DO9
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -60°C ~ 180°C
Supplier Device Package: DO-9
Current - Average Rectified (Io): 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
auf Bestellung 44 Stücke
Lieferzeit 21-28 Tag (e)
1+ 172.64 EUR
10+ 153.71 EUR
25+ 149.21 EUR
S300Y s300y.pdf
S300Y
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
1+ 170.3 EUR
10+ 151.64 EUR
25+ 147.2 EUR
GB50SLT12-247 GB50SLT12-247.pdf
GB50SLT12-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 50A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 2940pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N2131A 1n2128a_thru_1n2131ar.pdf
1N2131A
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 60A DO5
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Current - Average Rectified (Io): 60A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR5010 mur5005_thru_mur5020r.pdf
MUR5010
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6098 1n6097.pdf
1N6098
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 50A DO5
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 6 Stücke
Lieferzeit 21-28 Tag (e)
1+ 67.83 EUR
1N8031-GA 1N8031-GA.pdf
1N8031-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 1A TO276
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-276
Package / Case: TO-276AA
Mounting Type: Through Hole
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N8030-GA 1N8030-GA.pdf
1N8030-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 750MA TO257
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.39V @ 750mA
Current - Average Rectified (Io): 750mA
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
1N8024-GA 1N8024-GA.pdf
1N8024-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 750MA TO257
Packaging: Tube
Part Status: Obsolete
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 750mA
Voltage - Forward (Vf) (Max) @ If: 1.74V @ 750mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: 66pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C
Base Part Number: 1N8024
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N8032-GA 1N8032-GA.pdf
1N8032-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 2.5A TO257
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 274pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 2.5A
Voltage - DC Reverse (Vr) (Max): 650V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N8035-GA 1N8035-GA.pdf
1N8035-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 14.6A TO276
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-276
Package / Case: TO-276AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 14.6A (DC)
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
1N8026-GA 1N8026-GA.pdf
1N8026-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SILICON 1.2KV 8A TO257
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2.5A
Current - Average Rectified (Io): 8A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1N8034-GA 1N8034-GA.pdf
1N8034-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 650V 9.4A TO257
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Current - Average Rectified (Io): 9.4A (DC)
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N8028-GA 1N8028-GA.pdf
1N8028-GA
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 9.4A TO257
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Package / Case: TO-257-3
Mounting Type: Through Hole
Capacitance @ Vr, F: 884pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
Current - Average Rectified (Io): 9.4A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA03JT12-247 GA03JT12-247.pdf
GA03JT12-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 3A TO-247AB
Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C)
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 91W
auf Bestellung 236 Stücke
Lieferzeit 21-28 Tag (e)
GA06JT12-247 GA06JT12-247.pdf
GA06JT12-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 6A TO-247AB
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 146W
Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA04JT17-247 GA04JT17-247.pdf
GA04JT17-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 4A TO-247AB
Power - Max: 106W
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
GA08JT17-247 GA08JT17-247.pdf
GA08JT17-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 8A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247AB
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
Drain to Source Voltage (Vdss): 1700V
Technology: SiC (Silicon Carbide Junction Transistor)
Part Status: Active
auf Bestellung 427 Stücke
Lieferzeit 21-28 Tag (e)
S12BR s12b_thru_s12jr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Current - Average Rectified (Io): 12A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S12GR s12b_thru_s12jr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Current - Average Rectified (Io): 12A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85D02 fr85b02_thru_fr85jr02.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85D05 fr85b05_thru_fr85jr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 85A DO5
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85DR02 fr85b02_thru_fr85jr02.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 85A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85DR05 fr85b05_thru_fr85jr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85B02 fr85b02_thru_fr85jr02.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 85A DO5
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85B05 fr85b05_thru_fr85jr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 85A DO5
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85BR02 fr85b02_thru_fr85jr02.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85BR05 fr85b05_thru_fr85jr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 85A DO5
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85G05 fr85b05_thru_fr85jr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 85A DO5
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85GR05 fr85b05_thru_fr85jr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85J02 fr85b02.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 85A DO5
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85J05 fr85b05_thru_fr85jr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 85A DO5
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85JR02 fr85b02_thru_fr85jr02.pdf
FR85JR02
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
auf Bestellung 97 Stücke
Lieferzeit 21-28 Tag (e)
FR85JR05 fr85b05_thru_fr85jr05.pdf
FR85JR05
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 85A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
auf Bestellung 97 Stücke
Lieferzeit 21-28 Tag (e)
FR85K05 fr85k05_thru_fr85mr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85KR05 fr85k05_thru_fr85mr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 85A DO5
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85M05 fr85k05_thru_fr85mr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 85A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR85MR05 fr85k05_thru_fr85mr05.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 85A DO5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: DO-5
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR5005 mur5005_thru_mur5020r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 50A DO5
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR5005R mur5005_thru_mur5020r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR5020 mur5005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 50A DO5
Current - Average Rectified (Io): 50A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 48 Stücke - Preis und Lieferfrist anzeigen
MUR5020R mur5005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Standard, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR5040 mur5040_thru_mur5060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200 Stücke - Preis und Lieferfrist anzeigen
MUR5040R mur5040_thru_mur5060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR5060 mur5040_thru_mur5060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 50A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200 Stücke - Preis und Lieferfrist anzeigen
MUR5060R mur5040_thru_mur5060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 50A DO5
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 90ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR7005 mur7005_thru_mur7020r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A DO5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16000 Stücke - Preis und Lieferfrist anzeigen
MUR7005R mur7005_thru_mur7020r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 70A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR7010 mur7005_thru_mur7020r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A DO5
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
MUR7010R mur7005_thru_mur7020r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 70A DO5
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR7020R mur7005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 70A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR7040 mur7040_thru_mur7060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A DO5
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
MUR7040R mur7040_thru_mur7060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 70A DO5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR7060 mur7040_thru_mur7060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A DO5
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
MUR7060R mur7040_thru_mur7060r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 70A DO5
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Current - Average Rectified (Io): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR35100 mbr3560.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Mounting Type: Chassis, Stud Mount
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR35100R mbr3560.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V DO4
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 35A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3520 mbr3520.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 35A DO4
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
MBR3520R mbr3520.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V DO4
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3530 mbr3520.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 35A DO4
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3530R mbr3520.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V DO4
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3535 mbr3520.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 35A DO4
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
MBR3535R mbr3520.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V DO4
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3540 mbr3520.pdf
MBR3540
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3540R mbr3520.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3545 mbr3560.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10015 Stücke - Preis und Lieferfrist anzeigen
1+ 47.11 EUR
MBR3545R mbr3560.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V DO4
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR3560 mbr3560.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 35A DO4
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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