Technische Details 1N3671A Vishay
Description: DIODE GEN PURP 800V 12A DO4, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-4, Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Weitere Produktangebote 1N3671A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1N3671A | Hersteller : GeneSiC Semiconductor |
 Rectifier Diode Switching 800V 12A 2-Pin DO-4 |
Produkt ist nicht verfügbar |
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1N3671A | Hersteller : Microchip Technology |
Rectifier Diode Switching 800V 22A 2-Pin DO-4 Tray |
Produkt ist nicht verfügbar |
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| 1N3671A | Hersteller : GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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1N3671A | Hersteller : GeneSiC Semiconductor |
Rectifiers 800V 12A Std. Recovery |
Produkt ist nicht verfügbar |