GB05MPS33-263 GeneSiC Semiconductor
auf Bestellung 757 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 73.27 EUR |
| 10+ | 67.08 EUR |
| 25+ | 64.77 EUR |
| 100+ | 61.41 EUR |
| 250+ | 59.59 EUR |
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Technische Details GB05MPS33-263 GeneSiC Semiconductor
Description: DIODE SIL CARB 3.3KV 14A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 288pF @ 1V, 1MHz, Current - Average Rectified (Io): 14A, Supplier Device Package: TO-263-7, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 3000 V.
Weitere Produktangebote GB05MPS33-263
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| GB05MPS33-263 | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide Schottky Diode |
Produkt ist nicht verfügbar |
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| GB05MPS33-263 | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Schottky Diode |
Produkt ist nicht verfügbar |
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GB05MPS33-263 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube Case: TO263-7 Mounting: SMD Kind of package: tube Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 3.3kV Load current: 5A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 2.4V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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GB05MPS33-263 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 3.3KV 14A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 288pF @ 1V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 3000 V |
Produkt ist nicht verfügbar |
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GB05MPS33-263 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube Case: TO263-7 Mounting: SMD Kind of package: tube Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 3.3kV Load current: 5A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 2.4V |
Produkt ist nicht verfügbar |