GD20MPS12H GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.54 EUR |
10+ | 7.52 EUR |
11+ | 7.11 EUR |
120+ | 6.84 EUR |
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Produktbewertung abgeben
Technische Details GD20MPS12H GeneSiC SEMICONDUCTOR
Description: DIODE SIL CARB 1.2KV 39A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 737pF @ 1V, 1MHz, Current - Average Rectified (Io): 39A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Weitere Produktangebote GD20MPS12H nach Preis ab 6.84 EUR bis 11.69 EUR
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GD20MPS12H | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A Max. forward impulse current: 128A Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 600 Stücke: Lieferzeit 7-14 Tag (e) |
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GD20MPS12H | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 39A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
auf Bestellung 3119 Stücke: Lieferzeit 10-14 Tag (e) |
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GD20MPS12H | Hersteller : GeneSiC Semiconductor | SiC Schottky Diodes 1200V 20A TO-247-2 SiC Schottky MPS |
auf Bestellung 2974 Stücke: Lieferzeit 10-14 Tag (e) |
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GD20MPS12H | Hersteller : GeneSiC Semiconductor | Silicon Carbide Schottky Diode |
Produkt ist nicht verfügbar |
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GD20MPS12H | Hersteller : GeneSiC Semiconductor | Silicon Carbide Schottky Diode |
Produkt ist nicht verfügbar |
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GD20MPS12H | Hersteller : GeneSiC Semiconductor | 1200V 20A SiC Schottky MPS Diode |
Produkt ist nicht verfügbar |