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HBDM60V600W-7

HBDM60V600W-7 Diodes Inc


hbdm60v600w.pdf Hersteller: Diodes Inc
Trans GP BJT NPN/PNP 65V 0.5A/0.6A 200mW 6-Pin SOT-363 T/R
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Technische Details HBDM60V600W-7 Diodes Inc

Description: TRANS NPN/PNP 65V/60V SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 500mA, 600mA, Voltage - Collector Emitter Breakdown (Max): 65V, 60V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-363, Part Status: Obsolete.

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HBDM60V600W-7 HBDM60V600W-7 Hersteller : Diodes Incorporated HBDM60V600W.pdf Description: TRANS NPN/PNP 65V/60V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 500mA, 600mA
Voltage - Collector Emitter Breakdown (Max): 65V, 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Obsolete
Produkt ist nicht verfügbar
HBDM60V600W-7 HBDM60V600W-7 Hersteller : Diodes Incorporated HBDM60V600W.pdf Description: TRANS NPN/PNP 65V/60V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 500mA, 600mA
Voltage - Collector Emitter Breakdown (Max): 65V, 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Obsolete
Produkt ist nicht verfügbar
HBDM60V600W-7 HBDM60V600W-7 Hersteller : Diodes Incorporated DIOD_S_A0012960305_1-2513081.pdf Bipolar Transistors - BJT 200mW Half H-Bridge
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HBDM60V600W-7 Hersteller : onsemi / Fairchild HBDM60V600W.pdf Bipolar Transistors - BJT
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