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HBDM60V600W-7

HBDM60V600W-7 Diodes Incorporated

HBDM60V600W.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 65V/60V SOT363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 65V, 60V
Current - Collector (Ic) (Max): 500mA, 600mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SOT-363
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Technische Details HBDM60V600W-7 Diodes Incorporated

Description: TRANS NPN/PNP 65V/60V SOT363, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 65V, 60V, Current - Collector (Ic) (Max): 500mA, 600mA, Power - Max: 200mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 1 NPN, 1 PNP, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: SOT-363.

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HBDM60V600W-7 HBDM60V600W-7 Diodes Incorporated HBDM60V600W.pdf Description: TRANS NPN/PNP 65V/60V SOT363
Part Status: Obsolete
Supplier Device Package: SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 65V, 60V
Current - Collector (Ic) (Max): 500mA, 600mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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HBDM60V600W-7 HBDM60V600W-7 Diodes Incorporated DIOD_S_A0012960305_1-2513081.pdf Bipolar Transistors - BJT 200mW Half H-Bridge
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HBDM60V600W-7 onsemi / Fairchild HBDM60V600W.pdf Bipolar Transistors - BJT
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HBDM60V600W-7 HBDM60V600W.pdf
HBDM60V600W-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 65V/60V SOT363
Part Status: Obsolete
Supplier Device Package: SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 65V, 60V
Current - Collector (Ic) (Max): 500mA, 600mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HBDM60V600W-7 DIOD_S_A0012960305_1-2513081.pdf
HBDM60V600W-7
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 200mW Half H-Bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HBDM60V600W-7 HBDM60V600W.pdf
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH