HGTD1N120BNS9A ON Semiconductor
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 2.34 EUR |
| 68+ | 2.22 EUR |
| 100+ | 1.74 EUR |
| 250+ | 1.63 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.04 EUR |
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Technische Details HGTD1N120BNS9A ON Semiconductor
Description: IGBT 1200V 5.3A 60W TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A, Supplier Device Package: TO-252AA, IGBT Type: NPT, Td (on/off) @ 25°C: 15ns/67ns, Switching Energy: 70µJ (on), 90µJ (off), Test Condition: 960V, 1A, 82Ohm, 15V, Gate Charge: 14 nC, Part Status: Active, Current - Collector (Ic) (Max): 5.3 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 6 A, Power - Max: 60 W.
Weitere Produktangebote HGTD1N120BNS9A nach Preis ab 0.99 EUR bis 3.69 EUR
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HGTD1N120BNS9A | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 5.3A 60W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD1N120BNS9A | Hersteller : onsemi / Fairchild |
IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series |
auf Bestellung 14594 Stücke: Lieferzeit 14-28 Tag (e) |
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HGTD1N120BNS9A | Hersteller : onsemi |
Description: IGBT 1200V 5.3A 60W TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A Supplier Device Package: TO-252AA IGBT Type: NPT Td (on/off) @ 25°C: 15ns/67ns Switching Energy: 70µJ (on), 90µJ (off) Test Condition: 960V, 1A, 82Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 5.3 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 6 A Power - Max: 60 W |
auf Bestellung 2111 Stücke: Lieferzeit 21-28 Tag (e) |
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HGTD1N120BNS9A | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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HGTD1N120BNS9A | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 5.3A 60W 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| HGTD1N120BNS9A | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK Mounting: SMD Gate charge: 21nC Pulsed collector current: 6A Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±20V Collector current: 2.7A Collector-emitter voltage: 1.2kV Power dissipation: 60W Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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HGTD1N120BNS9A | Hersteller : onsemi |
Description: IGBT 1200V 5.3A 60W TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A Supplier Device Package: TO-252AA IGBT Type: NPT Td (on/off) @ 25°C: 15ns/67ns Switching Energy: 70µJ (on), 90µJ (off) Test Condition: 960V, 1A, 82Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 5.3 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 6 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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| HGTD1N120BNS9A | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK Mounting: SMD Gate charge: 21nC Pulsed collector current: 6A Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±20V Collector current: 2.7A Collector-emitter voltage: 1.2kV Power dissipation: 60W |
Produkt ist nicht verfügbar |