HS2M YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SMB; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMB
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 590+ | 0.12 EUR |
| 1070+ | 0.067 EUR |
| 1080+ | 0.066 EUR |
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Technische Details HS2M YANGJIE TECHNOLOGY
Description: DIODE GEN PURP 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote HS2M nach Preis ab 0.066 EUR bis 1.01 EUR
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HS2M | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SMB; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMB Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
auf Bestellung 1080 Stücke: Lieferzeit 7-14 Tag (e) |
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HS2M | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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HS2M | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 3203 Stücke: Lieferzeit 21-28 Tag (e) |
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HS2M | Hersteller : Taiwan Semiconductor |
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HS2M | Hersteller : Taiwan Semiconductor |
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HS2M | Hersteller : Taiwan Semiconductor | Rectifiers 75ns, 2A, 1000V, High Efficient Recovery Rectifier |
Produkt ist nicht verfügbar |