IDL02G65C5XUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIL CARBIDE 650V 2A VSON-4
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 2189 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 303+ | 2.35 EUR |
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Technische Details IDL02G65C5XUMA1 Infineon Technologies
Description: DIODE SIL CARBIDE 650V 2A VSON-4, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 70pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: PG-VSON-4, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Current - Reverse Leakage @ Vr: 35 µA @ 650 V.
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IDL02G65C5XUMA1 | Hersteller : Infineon Technologies |
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IDL02G65C5XUMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARBIDE 650V 2A VSON-4 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 35 µA @ 650 V |
Produkt ist nicht verfügbar |