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IDL02G65C5XUMA1

IDL02G65C5XUMA1 Infineon Technologies

Infineon-IDL02G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ffd4f05a141d
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 2A VSON-4
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-VSON-4
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Bulk
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Technische Details IDL02G65C5XUMA1 Infineon Technologies

Description: DIODE SIL CARBIDE 650V 2A VSON-4, Current - Reverse Leakage @ Vr: 35 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-VSON-4, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 70pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).

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IDL02G65C5XUMA1 IDL02G65C5XUMA1 Infineon Technologies Infineon-IDL02G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ffd4f05a141d Description: DIODE SIL CARBIDE 650V 2A VSON-4
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-VSON-4
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDL02G65C5XUMA1 Infineon-IDL02G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ffd4f05a141d
IDL02G65C5XUMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 2A VSON-4
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-VSON-4
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH