IMH1A T110

IMH1AT110

Hersteller:

emh1t2r-e.pdf
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Technische Details IMH1AT110

Description: TRANS PREBIAS DUAL NPN SMT6, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Transistor Type: 2 NPN - Pre-Biased (Dual), Supplier Device Package: SMT6, Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Power - Max: 300mW, Frequency - Transition: 250MHz, Current - Collector Cutoff (Max): 500nA.

Preis IMH1AT110 ab 0 EUR bis 0 EUR

IMH1A T110
Hersteller: RHOM
SOT23-6 04+
3000 Stücke
IMH1A T110
Hersteller: ROHM
SOT26/SOT363
4874 Stücke
IMH1AT110
IMH1AT110
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
imh1at110-e-1872825.pdf
auf Bestellung 5125 Stücke
Lieferzeit 14-28 Tag (e)
IMH1AT110
IMH1AT110
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
emh1t2r-e.pdf
auf Bestellung 267000 Stücke
Lieferzeit 21-28 Tag (e)
IMH1AT110
IMH1AT110
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
emh1t2r-e.pdf
auf Bestellung 269743 Stücke
Lieferzeit 21-28 Tag (e)
IMH1AT110
IMH1AT110
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
emh1t2r-e.pdf
auf Bestellung 269743 Stücke
Lieferzeit 21-28 Tag (e)