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IPU80R3K3P7AKMA1

IPU80R3K3P7AKMA1 Infineon Technologies

Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 150000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
801+0.96 EUR
Mindestbestellmenge: 801
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Technische Details IPU80R3K3P7AKMA1 Infineon Technologies

Description: MOSFET N-CH 800V 1.9A TO251-3, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V.

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IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 Hersteller : Infineon Technologies Infineon_IPU80R3K3P7_DataSheet_v02_02_EN-3165540.pdf MOSFET LOW POWER_NEW
auf Bestellung 29 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.15 EUR
28+ 1.92 EUR
100+ 1.45 EUR
500+ 1.21 EUR
1000+ 0.96 EUR
1500+ 0.81 EUR
Mindestbestellmenge: 25
IPU80R3K3P7AKMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f IPU80R3K3P7 THT N channel transistors
Produkt ist nicht verfügbar
IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 Hersteller : Infineon Technologies Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
Produkt ist nicht verfügbar