auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.63 EUR |
| 1500+ | 0.52 EUR |
| 4500+ | 0.49 EUR |
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Technische Details IPU80R3K3P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V.
Weitere Produktangebote IPU80R3K3P7AKMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IPU80R3K3P7AKMA1 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IPU80R3K3P7AKMA1 - IPU80R3K3 - 800V COOLMOS N-CHANNEL POWERtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R3K3P7AKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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IPU80R3K3P7AKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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| IPU80R3K3P7AKMA1 | Hersteller : INFINEON TECHNOLOGIES |
IPU80R3K3P7 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPU80R3K3P7AKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V |
Produkt ist nicht verfügbar |