Suchergebnisse für "IR-77" : 6
Art der Ansicht :
Mindestbestellmenge: 20
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IR7788 | IR | SOP-8 |
auf Bestellung 70 Stücke: Lieferzeit 21-28 Tag (e) |
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SIR770DP-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 5885 Stücke: Lieferzeit 14-28 Tag (e) |
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SIR770DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 35A Power dissipation: 17.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIR770DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 35A Power dissipation: 17.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIR770DP-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
SIR770DP-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 5885 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.73 EUR |
24+ | 2.24 EUR |
100+ | 1.74 EUR |
500+ | 1.48 EUR |
1000+ | 1.23 EUR |
SIR770DP-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIR770DP-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIR770DP-T1-GE3 |
Hersteller: Vishay
Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R
Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R
Produkt ist nicht verfügbar