SIR770DP-T1-GE3 Vishay Semiconductors
auf Bestellung 5222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.86 EUR |
| 6000+ | 0.83 EUR |
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Technische Details SIR770DP-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 8A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 17.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote SIR770DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIR770DP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SIR770DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 17.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |
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SIR770DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 17.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |
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| SIR770DP-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 35A Power dissipation: 17.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |