SIR770DP-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.86 EUR |
| 6000+ | 0.83 EUR |
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Technische Details SIR770DP-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 8A PPAK SO8, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 17.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 2.8V @ 250µA.
Weitere Produktangebote SIR770DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SIR770DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 8A PPAK SO8FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 17.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.8V @ 250µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
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SIR770DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK SO8 Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 17.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIR770DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK SO8
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Description: MOSFET 2N-CH 30V 8A PPAK SO8
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR770DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 8A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH