IRF520SPBF

IRF520SPBF

IRF520SPBF

Hersteller: Vishay Semiconductors
MOSFET N-Channel 100V
sihf520s-1504794.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6017 Stücke
Lieferzeit 14-28 Tag (e)
14+ 3.77 EUR
16+ 3.38 EUR
100+ 2.65 EUR
500+ 2.17 EUR

Technische Details IRF520SPBF

Description: MOSFET N-CH 100V 9.2A D2PAK, Packaging: Tube, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 60W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Preis IRF520SPBF ab 2.17 EUR bis 3.77 EUR

IRF520SPBF
Hersteller: Vishay
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) D2PAK
sihf520s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF520SPBF
IRF520SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
sihf520s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen