IRF7406PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
P-канальний ПТ; Udss, В = 30; Id = 5,8 А; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1100 @ 25; Qg, нКл = 59 @ 10 В; Rds = 45 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
P-канальний ПТ; Udss, В = 30; Id = 5,8 А; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1100 @ 25; Qg, нКл = 59 @ 10 В; Rds = 45 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.88 EUR |
10+ | 0.75 EUR |
100+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF7406PBF International Rectifier/Infineon
Description: MOSFET P-CH 30V 5.8A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRF7406PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRF7406PBF Produktcode: 26544 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||
IRF7406PBF | Hersteller : Infineon Technologies | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
||
IRF7406PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
||
IRF7406PBF | Hersteller : Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC |
Produkt ist nicht verfügbar |