IRF9530NSPBF International Rectifier/Infineon
Hersteller: International Rectifier/InfineonP-канальний ПТ; Udss, В = 100; Id = 14 A; Ptot, Вт = 3,8; Тип монт. = smd; Ciss, пФ @ Uds, В = 760 @ 25; Qg, нКл = 58 @ 10 В; Rds = 200 мОм @ 8,4 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 4 В @ 250 мкА; D2PAK
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 1.92 EUR |
| 10+ | 1.66 EUR |
| 100+ | 1.46 EUR |
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Technische Details IRF9530NSPBF International Rectifier/Infineon
Description: MOSFET P-CH 100V 14A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V, Power Dissipation (Max): 3.8W (Ta), 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V.
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Description: MOSFET P-CH 100V 14A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
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IRF9530NSPBF | Hersteller : Infineon Technologies |
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IRF9530NSPBF | Hersteller : Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -14A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 38.7nC Kind of channel: enhanced |
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