IRF9Z34STRLPBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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Technische Details IRF9Z34STRLPBF Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRF9Z34STRLPBF nach Preis ab 1.29 EUR bis 7.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IRF9Z34STRLPBF | Vishay |
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z34STRLPBF | Vishay |
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z34STRLPBF | Vishay Semiconductors |
MOSFETs P-Chan 60V 18 Amp |
auf Bestellung 2730 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9Z34STRLPBF | Vishay Siliconix |
Description: MOSFET P-CH 60V 18A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 1580 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9Z34STRLPBF | VISHAY |
Description: VISHAY - IRF9Z34STRLPBF - MOSFET, P CH, -60V, -18A, TO-263-3 tariffCode: 85412900 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - Unlimited Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 88W SVHC: Lead (04-Feb-2026) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: P Channel Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.14ohm directShipCharge: 25 |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF9Z34STRLPBF |
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Hersteller: Vishay
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 2.56 EUR |
| 82+ | 2.03 EUR |
| 93+ | 1.73 EUR |
| 120+ | 1.29 EUR |
| IRF9Z34STRLPBF |
|
Hersteller: Vishay
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 2.56 EUR |
| 82+ | 2.08 EUR |
| 93+ | 1.8 EUR |
| 120+ | 1.36 EUR |
| IRF9Z34STRLPBF |
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Hersteller: Vishay Semiconductors
MOSFETs P-Chan 60V 18 Amp
MOSFETs P-Chan 60V 18 Amp
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.01 EUR |
| 10+ | 2.56 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.75 EUR |
| 800+ | 1.55 EUR |
| IRF9Z34STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET P-CH 60V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.15 EUR |
| 10+ | 3.32 EUR |
| 50+ | 2.53 EUR |
| 100+ | 2.28 EUR |
| IRF9Z34STRLPBF |
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Hersteller: VISHAY
Description: VISHAY - IRF9Z34STRLPBF - MOSFET, P CH, -60V, -18A, TO-263-3
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - Unlimited
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 88W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.14ohm
directShipCharge: 25
Description: VISHAY - IRF9Z34STRLPBF - MOSFET, P CH, -60V, -18A, TO-263-3
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - Unlimited
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 88W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.14ohm
directShipCharge: 25
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 7.52 EUR |
| 48+ | 4.89 EUR |