IRFD110 Siliconix
Hersteller: SiliconixTransistor N-Channel MOSFET; 100V; 20V; 540mOhm; 1A; 1,3W; -55°C ~ 175°C; IRFD110 TIRFD110
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.01 EUR |
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Technische Details IRFD110 Siliconix
Description: 1A, 100V, 0.600 OHM, N-CHANNEL, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRFD110 nach Preis ab 1.37 EUR bis 1.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IRFD110 | Hersteller : Harris Corporation |
Description: 1A, 100V, 0.600 OHM, N-CHANNEL Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DIP, Hexdip, HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
auf Bestellung 44368 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFD110 |
IRFD110 Транзисторы HEXFET |
auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) |
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IRFD110 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRFD110 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1A 4DIP Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFD110 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT IRFD110PBF |
Produkt ist nicht verfügbar |
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IRFD110 | Hersteller : onsemi / Fairchild |
MOSFET |
Produkt ist nicht verfügbar |