IRFI9630GPBF

IRFI9630GPBF

Hersteller: VISHAY
Material: IRFI9630GPBF THT P channel transistors
91167.pdf
verfügbar/auf Bestellung
auf Bestellung 129 Stücke
Lieferzeit 7-14 Tag (e)

60+ 1.2 EUR
64+ 1.13 EUR
71+ 1.02 EUR
76+ 0.94 EUR
250+ 0.84 EUR

Technische Details IRFI9630GPBF

Description: MOSFET P-CH 200V 4.3A TO220-3, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA.

Preis IRFI9630GPBF ab 0.84 EUR bis 3.89 EUR

IRFI9630GPBF
Hersteller: Vishay
Trans MOSFET P-CH 200V 4.3A 3-Pin(3+Tab) TO-220FP
91167.pdf
auf Bestellung 61 Stücke
Lieferzeit 14-21 Tag (e)
41+ 3.89 EUR
46+ 3.4 EUR
48+ 3.14 EUR
IRFI9630GPBF
Hersteller: VISHAY
Material: IRFI9630GPBF THT P channel transistors
91167.pdf
129 Stücke
IRFI9630GPBF
IRFI9630GPBF
Hersteller: Vishay
Trans MOSFET P-CH 200V 4.3A 3-Pin(3+Tab) TO-220FP
91167.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9630GPBF
IRFI9630GPBF
Hersteller: Vishay Semiconductors
MOSFET 200V P-CH HEXFET MOSFET
VISH_S_A0012821963_1-2572344.pdf
auf Bestellung 811 Stücke
Lieferzeit 14-28 Tag (e)
IRFI9630GPBF
IRFI9630GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 4.3A TO220-3
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
91167.pdf
auf Bestellung 180 Stücke
Lieferzeit 21-28 Tag (e)