IRFR9010TRPBF
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2000 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 2000 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details IRFR9010TRPBF
Description: MOSFET P-CH 50V 5.3A DPAK, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc).
Preis IRFR9010TRPBF ab 0.59 EUR bis 2.7 EUR
 Hersteller: Vishay Siliconix Description: MOSFET P-CH 50V 5.3A DPAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) 
|
auf Bestellung 41 Stücke Lieferzeit 21-28 Tag (e) |
|
|
||||
 Hersteller: Vishay Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK T/R
|
2000 Stücke |
|
|
||||
|
IRFR9010TRPBF Hersteller: Vishay Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK T/R
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|||||
 Hersteller: Vishay Semiconductors MOSFET 50V P-CH HEXFET MOSFET D
|
auf Bestellung 2000 Stücke Lieferzeit 14-28 Tag (e) |
|
|
||||
|
Hersteller: Vishay Siliconix Description: MOSFET P-CH 50V 5.3A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|